SSF2437E - описание и поиск аналогов

 ..1. Size:511K  silikron
 ssf2437e.pdf 

SSF2437E Main Product Characteristics VDSS -20V RDS(on) 38m (typ.) ID -5.5A Marking and pin SOT-23-6 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

 8.1. Size:274K  goodark
 ssf2439e.pdf 

SSF2439E 20V P-Channel MOSFET DESCRIPTION The SSF2439E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = -20V,ID =-4.5A Schematic Diagram RDS(ON)

 9.1. Size:294K  silikron
 ssf2418eb.pdf 

SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

 9.2. Size:382K  silikron
 ssf2418e.pdf 

SSF2418E Main Product Characteristics VDSS 20V RDS(on) 18mohm(typ.) ID 6A Mark ing an d pi n SOT23-6 Schema t ic diagr a m Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

 9.3. Size:191K  silikron
 ssf2449.pdf 

SSF2449 D DESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)

 9.4. Size:346K  silikron
 ssf2485.pdf 

SSF2485 D1 D2 DESCRIPTION The SSF2485 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2 with gate voltages as low as 2.5V. S1 S2 Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)

 9.5. Size:344K  silikron
 ssf2429.pdf 

SSF2429 DESCRIPTION The SSF2429 uses advanced trench technology to D provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S VDS = -20V,ID =-5A Schematic diagram RDS(ON)

 9.6. Size:511K  goodark
 ssf2418b.pdf 

SSF2418B 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

 9.7. Size:508K  goodark
 ssf2418ebk.pdf 

SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

 9.8. Size:835K  cn vbsemi
 ssf2418e.pdf 

SSF2418E www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2 3