SSF2610E - описание и поиск аналогов

 ..1. Size:344K  silikron
 ssf2610e.pdf 

SSF2610E DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 8A Schematic diagram RDS(ON)

 8.1. Size:599K  silikron
 ssf2616e.pdf 

SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 9.1. Size:458K  silikron
 ssf2627.pdf 

SSF2627 D DESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5.4A RDS(ON)

 9.2. Size:310K  silikron
 ssf26ns60a.pdf 

SSF26NS60A Main Product Characteristics VDSS 600V RDS(on) 0.135 (typ.) ID 20A Marking and Pin D2PAK Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60A series MOSFETs is a new technology, which combines

 9.3. Size:304K  silikron
 ssf2637e.pdf 

SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES VDS = -20V,ID =-5.4A RDS(ON)

 9.4. Size:513K  silikron
 ssf26ns60.pdf 

SSF26NS60 Main Product Characteristics VDSS 600V RDS(on) 0.135 (typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60 series MOSFETs is a new technology, w

 9.5. Size:472K  silikron
 ssf2649.pdf 

SSF2649 Main Product Characteristics D1 D2 VDSS -20V G1 G2 RDS(on) 49mohm(typ.) S1 S2 ID -7.9A Marking and pin SOP-8 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

 9.6. Size:432K  goodark
 ssf2641s.pdf 

SSF2641S 20V P-Channel MOSFET D DESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G been optimized for power management applications requiring a wide range of gave drive voltage ratings. S Schematic Diagram GENERAL FEATURES VDS = -20V,ID = -7.9A RDS(ON)