SSF2610E DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 8A Schematic diagram RDS(ON)

SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

SSF2627DDESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5.4A RDS(ON)

SSF26NS60AMain Product Characteristics VDSS 600V RDS(on) 0.135(typ.) ID 20AMarking and Pin D2PAKSchematic DiagramAssignmentFeatures and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60A series MOSFETs is a new technology, which combines

SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES VDS = -20V,ID =-5.4A RDS(ON)

SSF26NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.135(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF26NS60 series MOSFETs is a new technology, w

SSF2649Main Product Characteristics: D1 D2VDSS -20V G1 G2 RDS(on) 49mohm(typ.)S1 S2ID -7.9A Marking and pin SOP-8Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

SSF2641S 20V P-Channel MOSFET DDESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings. SSchematic Diagram GENERAL FEATURES VDS = -20V,ID = -7.9A RDS(ON)