Справочник MOSFET. SSF2637E

 

SSF2637E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF2637E
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.043 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для SSF2637E

 

 

SSF2637E Datasheet (PDF)

 ..1. Size:304K  silikron
 ssf2637e.pdf

SSF2637E SSF2637E

SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES VDS = -20V,ID =-5.4A RDS(ON)

 9.1. Size:458K  silikron
 ssf2627.pdf

SSF2637E SSF2637E

SSF2627DDESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5.4A RDS(ON)

 9.2. Size:310K  silikron
 ssf26ns60a.pdf

SSF2637E SSF2637E

SSF26NS60AMain Product Characteristics VDSS 600V RDS(on) 0.135(typ.) ID 20AMarking and Pin D2PAKSchematic DiagramAssignmentFeatures and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60A series MOSFETs is a new technology, which combines

 9.3. Size:344K  silikron
 ssf2610e.pdf

SSF2637E SSF2637E

SSF2610E DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 8A Schematic diagram RDS(ON)

 9.4. Size:513K  silikron
 ssf26ns60.pdf

SSF2637E SSF2637E

SSF26NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.135(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF26NS60 series MOSFETs is a new technology, w

 9.5. Size:599K  silikron
 ssf2616e.pdf

SSF2637E SSF2637E

SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 9.6. Size:472K  silikron
 ssf2649.pdf

SSF2637E SSF2637E

SSF2649Main Product Characteristics: D1 D2VDSS -20V G1 G2 RDS(on) 49mohm(typ.)S1 S2ID -7.9A Marking and pin SOP-8Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

 9.7. Size:432K  goodark
 ssf2641s.pdf

SSF2637E SSF2637E

SSF2641S 20V P-Channel MOSFET DDESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings. SSchematic Diagram GENERAL FEATURES VDS = -20V,ID = -7.9A RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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