Справочник MOSFET. SSF2810EH2

 

SSF2810EH2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF2810EH2
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 8 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 49 ns
   Выходная емкость (Cd): 209 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm
   Тип корпуса: TSSOP8

 Аналог (замена) для SSF2810EH2

 

 

SSF2810EH2 Datasheet (PDF)

 ..1. Size:528K  silikron
 ssf2810eh2.pdf

SSF2810EH2 SSF2810EH2

SSF2810EH2 Main Product Characteristics: VDSS 20V RDS(on) 10m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

 8.1. Size:533K  silikron
 ssf2814eh2.pdf

SSF2810EH2 SSF2810EH2

SSF2814EH2 Main Product Characteristics: VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

 8.2. Size:286K  silikron
 ssf2814e.pdf

SSF2810EH2 SSF2810EH2

SSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 8.3. Size:298K  silikron
 ssf2816eb.pdf

SSF2810EH2 SSF2810EH2

SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 8.4. Size:425K  silikron
 ssf2816e.pdf

SSF2810EH2 SSF2810EH2

SSF2816E Main Product Characteristics: VDSS 20V RDS(on) 16.5mohm(typ.) ID 7A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.5. Size:458K  goodark
 ssf2816ebk.pdf

SSF2810EH2 SSF2810EH2

SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic Diagram RDS(ON)

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