SSF2814E - Даташиты. Аналоги. Основные параметры

SSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

SSF2814EH2 Main Product Characteristics: VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

SSF2810EH2 Main Product Characteristics: VDSS 20V RDS(on) 10m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

SSF2816E Main Product Characteristics: VDSS 20V RDS(on) 16.5mohm(typ.) ID 7A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic Diagram RDS(ON)