Справочник MOSFET. SSF2816EB

 

SSF2816EB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF2816EB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 330 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: TSSOP8

 Аналог (замена) для SSF2816EB

 

 

SSF2816EB Datasheet (PDF)

 ..1. Size:298K  silikron
 ssf2816eb.pdf

SSF2816EB SSF2816EB

SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 0.1. Size:458K  goodark
 ssf2816ebk.pdf

SSF2816EB SSF2816EB

SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic Diagram RDS(ON)

 6.1. Size:425K  silikron
 ssf2816e.pdf

SSF2816EB SSF2816EB

SSF2816E Main Product Characteristics: VDSS 20V RDS(on) 16.5mohm(typ.) ID 7A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.1. Size:533K  silikron
 ssf2814eh2.pdf

SSF2816EB SSF2816EB

SSF2814EH2 Main Product Characteristics: VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

 8.2. Size:286K  silikron
 ssf2814e.pdf

SSF2816EB SSF2816EB

SSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 8.3. Size:528K  silikron
 ssf2810eh2.pdf

SSF2816EB SSF2816EB

SSF2810EH2 Main Product Characteristics: VDSS 20V RDS(on) 10m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

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