SSF3092G1 - описание и поиск аналогов

 ..1. Size:460K  silikron
 ssf3092g1.pdf 

 9.1. Size:331K  silikron
 ssf3018.pdf 

SSF3018 Feathers ID=60A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=15mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The SSF3018 is a new generation of middle voltage and high current N Channel enhancement mode t

 9.2. Size:339K  silikron
 ssf3018d.pdf 

SSF3018D Feathers ID=80A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=14mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The SSF3018D is a new generation of middle voltage and high current N Channel enhancement mod

 9.3. Size:461K  silikron
 ssf3056c.pdf 

SSF3056C Main Product Characteristics NMOS PMOS D1 S1 D1 S1 NMOS NMOS D1 G1 D1 G1 VDSS 30V -30V D2 S2 D2 S2 PMOS PMOS D2 G2 D2 G2 RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A -4.5A DFN2X3-8L Schematic diagram Bottom View Features and Benefits Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and gene

 9.4. Size:439K  silikron
 ssf3002eg1.pdf 

SSF3002EG1 Main Product Characteristics V 30V DSS R (on) 1ohm(typ.) DS I 0.5A D Marking and pin SOT23 Schematic diagram Assignment Features andBenefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 1

 9.5. Size:268K  silikron
 ssf3055.pdf 

SSF3055 D DESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This G device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 25V,ID = 12A RDS(ON)

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 ssf3051g7.pdf 

SSF3051G7 Main Product Characteristics D VDSS -30V G RDS(on) 45mohm(typ.) S ID -4A Marking and pin SOT23-6 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and rev

 9.7. Size:468K  silikron
 ssf3028c1.pdf 

SSF3028C1 Main Product Characteristics V 30V DSS R (on) 28mohm(typ.) DS I 21A D TO-252 Marking and pin Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 op

 9.8. Size:384K  silikron
 ssf3036c.pdf 

SSF3036C Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm N-Channel Mosfet P-Channel Mosfet DFN 3x2-8L Schematic diagram ID 4A -3.6A Bottom View Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast