SSF3365 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF3365
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 150 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
Тип корпуса: SOT23
SSF3365 Datasheet (PDF)
ssf3365.pdf
SSF3365DDESCRIPTION The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -3A RDS(ON)
ssf3341.pdf
SSF3341 Main Product Characteristics: DVDSS -30V G RDS(on) 42m (typ.) SID -4.2A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf3341l.pdf
SSF3341LDDESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)
ssf3324.pdf
SSF3324 Main Product Characteristics: VDSS 30V RDS(on) 26.5mohm(typ.) ID 5.8A Marking and pin SOT23 Schematic diagram Assignme nt Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
ssf3339.pdf
SSF3339 Main Product Characteristics: DVDSS -30V G RDS(on) 37m (typ.) SID -4.1A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf3314e.pdf
SSF3314EDESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic diagram GENERAL F
ssf3322.pdf
SSF3322DDESCRIPTION The SSF3322 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =5.8A RDS(ON)
ssf3338.pdf
SSF3338 DDESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =4A RDS(ON)
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