SSF4604 DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES D1 D1 D2 D2N-Channel 8 7 6 5VDS = 30V,ID = 6.9A RDS(ON)

SSF4607D Main Product Characteristics: DVDSS -30V G RDS(on) 19m(typ.) SID -25A TO-252 Marking and pin Schematic diagram Ass ig nme nt Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse

SSF4606 DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES N-Channel VDS = 30V,ID = 6.9A RDS(ON)

SSF4624 DESCRIPTION The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 40V,ID =6A RDS(ON)