SSF4N60G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF4N60G
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 77 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 12.7 ns
Выходная емкость (Cd): 56 pf
Сопротивление сток-исток открытого транзистора (Rds): 2.4 Ohm
Тип корпуса: TO251
SSF4N60G Datasheet (PDF)
ssf4n60g.pdf
SSF4N60G Main Product Characteristics: VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf4n60d.pdf
SSF4N60D Main Product Characteristics: VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf4n60f.pdf
SSF4N60F Main Product Characteristics: VDSS 600V RDS(on) 1.9(typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf4n60.pdf
SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage NChannel enhancement mode
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
