SSF6025
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF6025
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 166
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 60
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 23.7
ns
Cossⓘ - Выходная емкость: 376
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025
Ohm
Тип корпуса:
TO220
- подбор MOSFET транзистора по параметрам
SSF6025
Datasheet (PDF)
..1. Size:549K silikron
ssf6025.pdf 

SSF6025Main Product Characteristics:V -60VDSSR (on) 12m (typ.)DSI -60ADTO-220 Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge High Power and current handing capability Fu
9.1. Size:503K silikron
ssf6007.pdf 

SSF6007 Main Product Characteristics: VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Marking and p in Schematic dia gram SOT-23 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra l
9.2. Size:259K silikron
ssf6014j7.pdf 

SSF6014J7Main Product Characteristics: VDSS 60V RDS(on) 11m (typ.) ID 40APQFN 5x6Pin AssignmentSchematic DiagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope
9.3. Size:498K silikron
ssf6072g5.pdf 

SSF6072G5 Main Product Characteristics: VDSS 60V SSF6072G5SSF6072G560726072 RDS(on) 67m (typ.) ID 4A Marking and pin SOT-223 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for DC-DC and DC-AC converters, load switching and general purpose applications Ultra low on-resistance with low gate c
9.4. Size:605K silikron
ssf6010.pdf 

SSF6010 Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical
9.5. Size:530K silikron
ssf6092g1.pdf 

SSF6092G1 Main Product Characteristics: VDSS 60V 70m(typ) RDS(on) 2.7A ID Marking and pin SOT23 Schematic diagram A ssign men t Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.6. Size:688K silikron
ssf6014d.pdf 

SSF6014D Main Product Characteristics: VDSS 60V RDS(on) 12m(typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
9.7. Size:597K silikron
ssf6008.pdf 

SSF6008 Feathers: ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter
9.8. Size:443K silikron
ssf6010a.pdf 

SSF6010A Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electric
9.9. Size:481K silikron
ssf6014a.pdf 

SSF6014A Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and ele
9.10. Size:339K silikron
ssf6005.pdf 

SSF6005Main Product Characteristics: VDSS 60V RDS(on) 2.7m(typ.) ID 160AMarking and pin TO-220Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o
9.11. Size:807K silikron
ssf6014j8.pdf 

SSF6014J8Main Product Characteristics:V 60VDSSR (on) 16m (typ.)DSI 22ADPinAssignment Schematic diagramDFN3.3x3.3Bottom viewFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.12. Size:654K silikron
ssf6014.pdf 

SSF6014 Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
9.13. Size:370K goodark
ssf6007.pdf 

SSF6007 50V P-Channel MOSFET Main Product Characteristics VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Mark in g a nd P i n Sc hema t ic D i a gra m SOT-23 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and genera
9.14. Size:1096K goodark
ssf6010g.pdf 

SSF6010G 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 8.3m (typ.) ID 64A TO-251 Mark in g a nd P i n Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and
9.15. Size:913K cn super semi
ssf60r360s2e ssp60r360s2e sst60r360s2e.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R360S2ERev. 1.2Sep. 2022www.supersemi.com.cnSSF60R360S2E/SSP60R360S2E/SST60R360S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis util
9.16. Size:887K cn super semi
ssf60r070s2e ssp60r070s2e.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R070S2ERev. 1.1Aug. 2022www.supersemi.com.cnSSF60R070S2E/SSP60R070S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
9.17. Size:873K cn super semi
ssf60r260s2e ssp60r260s2e.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2ERev. 1.2Oct. 2022www.supersemi.com.cnSSF60R260S2E/SSP60R260S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
9.18. Size:1011K cn super semi
ssf60r260s2 ssp60r260s2 ssi60r260s2.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.0Jun. 2019www.supersemi.com.cnSSF60R260S2/SSP60R260S2/SSI60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
9.19. Size:1086K cn super semi
ssf60r190s2 ssp60r190s2 ssw60r190s2.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R190S2Rev. 1.4Mar. 2022www.supersemi.com.cnSSF60R190S2/SSP60R190S2/SSW60R190S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
9.20. Size:838K cn super semi
ssf60r190sfd2 ssp60r190sfd2.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R190SFD2Rev. 1.1Aug. 2022www.supersemi.com.cnSSF60R190SFD2/SSP60R190SFD2600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Mult
9.21. Size:1094K cn super semi
ssf60r190sfd ssp60r190sfd ssw60r190sfd.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R190SFDRev. 1.6Aug. 2022www.supersemi.com.cnSSF60R190SFD/SSP60R190SFD/SSW60R190SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryFeaturesDescription Multi-Epi process SJ-FETSJ-FET is new generation of
9.22. Size:1108K cn super semi
ssf60r280sfd ssp60r280sfd sst60r280sfd.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-Recovery SS*60R280SFDRev. 1.2Feb. 2023www.supersemi.com.cnSSF60R280SFD/SSP60R280SFD/SST60R280SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryFeaturesDescription Multi-Epi process SJ-FETSJ-FET is new generation o
9.23. Size:850K cn super semi
ssf60r190s2e ssp60r190s2e.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R190S2ERev. 1.0Aug. 2022www.supersemi.com.cnSSF60R190S2E/SSP60R190S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
9.24. Size:829K cn super semi
ssf60r075sfd2 ssp60r075sfd2.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R075SFD2Rev. 1.1Oct. 2022www.supersemi.com.cnSSF60R075SFD2/SSP60R075SFD2600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Mult
9.25. Size:896K cn super semi
ssf60r130s2 ssp60r130s2 ssw60r130s2.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R130S2Rev. 1.2Sep. 2022www.supersemi.com.cnSSF60R130S2/SSP60R130S2/SSW60R130S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
9.26. Size:914K cn super semi
ssf60r099sfd ssp60r099sfd ssw60r099sfd.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R099SFDRev. 1.2May. 2022www.supersemi.com.cnSSF60R099SFD/SSP60R099SFD/SSW60R099SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family tha
9.27. Size:919K cn super semi
ssf60r099s2e ssp60r099s2e.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R099S2ERev. 1.2Nov. 2022www.supersemi.com.cnSSF60R099S2E/SSP60R099S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
9.28. Size:911K cn super semi
ssf60r140sfd ssp60r140sfd ssw60r140sfd.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R140SFDRev. 1.2Sep. 2022www.supersemi.com.cnSSF60R140SFD/SSP60R140SFD/SSW60R140SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family tha
9.29. Size:932K cn super semi
ssf60r105sfd2 ssp60r105sfd2.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R105SFD2Rev. 1.2Nov. 2022www.supersemi.com.cnSSF60R105SFD2/SSP60R105SFD2600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Mult
9.30. Size:1005K cn super semi
ssf60r260s2 ssp60r260s2.pdf 

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.4Oct. 2022www.supersemi.com.cnSSF60R260S2/SSP60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
Другие MOSFET... FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, 5N60
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
History: NCE70N900R
| SIHF9540
| IXTX200N10L2
| 2N7002LT1
| 2SK330
| CS4N65FA9R
| SM7A23NSU