Справочник MOSFET. SSF7504H

 

SSF7504H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF7504H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 220 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 833 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для SSF7504H

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF7504H Datasheet (PDF)

 ..1. Size:568K  silikron
ssf7504h.pdfpdf_icon

SSF7504H

SSF7504H Main Product Characteristics: VDSS 75V RDS(on) 3.9m(typ.) ID 220A Marking and p in TO- 247 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

 7.1. Size:426K  silikron
ssf7504.pdfpdf_icon

SSF7504H

SSF7504 Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504 is a new generation of middle voltage and high current NChannel enhancemen

 7.2. Size:470K  silikron
ssf7504a7.pdfpdf_icon

SSF7504H

SSF7504A7 Main Product Characteristics: VDSS 75V 1, Gate RDS(on) 2.5m(typ.) 2~3,5~7 Source 4,8 Drain ID 220A Schematic Diagram TO-263-7L Pin Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching

 7.3. Size:396K  silikron
ssf7504a.pdfpdf_icon

SSF7504H

SSF7504A Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504A is a new generation of middle voltage and high current NChannel enhancem

Другие MOSFET... SSF6NS70F , SSF6NS70UD , SSF6NS70UG , SSF6NS70UGS , SSF6NS70UGX , SSF7504 , SSF7504A , SSF7504A7 , AO3407 , SSF7505 , SSF7507 , SSF7508 , SSF7508A , SSF7509A , SSF7509B , SSF7509J7 , SSF7510 .

History: RFD10P03LSM | NCEP040N10GU | SWD6N70DA | NCE3401AY | SWF13N65K2 | SFP052N80C3 | SIR624DP

 

 
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