Справочник MOSFET. SSF7509A

 

SSF7509A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF7509A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 165 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 15.2 ns
   Cossⓘ - Выходная емкость: 352 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для SSF7509A

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF7509A Datasheet (PDF)

 ..1. Size:396K  silikron
ssf7509a.pdfpdf_icon

SSF7509A

SSF7509AMain Product Characteristics: VDSS 75V RDS(on) 6.5mohm(typ.)ID 80AMarking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 7.1. Size:482K  silikron
ssf7509b.pdfpdf_icon

SSF7509A

SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3m(typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.2. Size:300K  silikron
ssf7509j7.pdfpdf_icon

SSF7509A

SSF7509J7Main Product Characteristics: VDSS 80V RDS(on) 7.5mohm(typ.)ID 70AMarking and pin PQFN5*6Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.3. Size:392K  silikron
ssf7509.pdfpdf_icon

SSF7509A

SSF7509 Feathers: ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.5m(Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current NChannel enhancement

Другие MOSFET... SSF7504 , SSF7504A , SSF7504A7 , SSF7504H , SSF7505 , SSF7507 , SSF7508 , SSF7508A , IRFZ44N , SSF7509B , SSF7509J7 , SSF7510 , SSF7604 , SSF7607 , SSF7609 , SSF7610 , SSF7N60 .

History: SSF6NS70F | WMN08N70EM | SI4914DY | NP32N055HDE | KIA3308A-252 | WMP05N80M3 | WPM3021

 

 
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