Справочник MOSFET. SSF7NS60F

 

SSF7NS60F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF7NS60F
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 32 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 7 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 15.1 nC
   Время нарастания (tr): 22.2 ns
   Выходная емкость (Cd): 399 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.65 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для SSF7NS60F

 

 

SSF7NS60F Datasheet (PDF)

 ..1. Size:569K  silikron
ssf7ns60f.pdf

SSF7NS60F SSF7NS60F

SSF7NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.54(typ.) ID 7A Marking a nd p in Schematic diagram TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60F series MOSFETs is a new techno

 6.1. Size:544K  silikron
ssf7ns60d.pdf

SSF7NS60F SSF7NS60F

SSF7NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.56 (typ.) ID 7A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60D series MOSFETs is a new t

 7.1. Size:497K  silikron
ssf7ns65g.pdf

SSF7NS60F SSF7NS60F

SSF7NS65G Main Product Characteristics: VDSS 650V RDS(on) 0.58 (typ.) ID 7A TO-251 Mark in g a nd pin Sch ema tic diag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65G series MOSFETs is a new t

 7.2. Size:449K  silikron
ssf7ns65uf.pdf

SSF7NS60F SSF7NS60F

SSF7NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.6 (typ.) ID 7A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UF series MOSFETs is a new technology, which

 7.3. Size:485K  silikron
ssf7ns65ud.pdf

SSF7NS60F SSF7NS60F

SSF7NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-252 (DPAK) Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF7NS65UD series MOSFETs is a new technology, whi

 7.4. Size:467K  silikron
ssf7ns65ug.pdf

SSF7NS60F SSF7NS60F

SSF7NS65UG Main Product Characteristics: VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-251 (IPAK) Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UG series MOSFETs is a new technology,

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