Справочник MOSFET. SSF8205

 

SSF8205 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF8205
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.25 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
   Пороговое напряжение включения |Ugs(th)|: 1.2 V
   Максимально допустимый постоянный ток стока |Id|: 4 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 4.8 ns
   Выходная емкость (Cd): 155 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.03 Ohm
   Тип корпуса: SOT23-6

 Аналог (замена) для SSF8205

 

 

SSF8205 Datasheet (PDF)

 ..1. Size:683K  silikron
 ssf8205.pdf

SSF8205 SSF8205

SSF8205 Main Product Characteristics: D1D2VDSS 20V G1 G2S1 S2 RDS(on) 20mohm(typ.) ID 4A Marking and pin SOT23-6 Sc he mati c di a gram A s si gnment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge F

 0.1. Size:599K  silikron
 ssf8205u.pdf

SSF8205 SSF8205

SSF8205UMain Product Characteristics: D1D2VDSS 18V G1 G2S1 S2 RDS(on) 20mohm(typ.)ID 4.5A Marking and pin SOT23-6Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

 0.2. Size:450K  silikron
 ssf8205a.pdf

SSF8205 SSF8205

SSF8205A DESCRIPTION D1D2The SSF8205A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)with gate voltages as low as 0.65V. This device is G1 G2suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram GENERAL FEATURES V = 20V,I = 6A DS DR

 0.3. Size:612K  silikron
 ssf8205uh2.pdf

SSF8205 SSF8205

SSF8205UH2Main Product Characteristics: D1D2VDSS 18V G1 G2S1 S2 RDS(on) 20mohm(typ.)ID 4.5A Marking and pin TSSOP-8 Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast swit

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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