Справочник MOSFET. SSF8205A

 

SSF8205A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF8205A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 330 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0275 Ohm
   Тип корпуса: TSSOP8
 

 Аналог (замена) для SSF8205A

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF8205A Datasheet (PDF)

 ..1. Size:450K  silikron
ssf8205a.pdfpdf_icon

SSF8205A

SSF8205A DESCRIPTION D1D2The SSF8205A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)with gate voltages as low as 0.65V. This device is G1 G2suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram GENERAL FEATURES V = 20V,I = 6A DS DR

 7.1. Size:599K  silikron
ssf8205u.pdfpdf_icon

SSF8205A

SSF8205UMain Product Characteristics: D1D2VDSS 18V G1 G2S1 S2 RDS(on) 20mohm(typ.)ID 4.5A Marking and pin SOT23-6Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

 7.2. Size:612K  silikron
ssf8205uh2.pdfpdf_icon

SSF8205A

SSF8205UH2Main Product Characteristics: D1D2VDSS 18V G1 G2S1 S2 RDS(on) 20mohm(typ.)ID 4.5A Marking and pin TSSOP-8 Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast swit

 7.3. Size:683K  silikron
ssf8205.pdfpdf_icon

SSF8205A

SSF8205 Main Product Characteristics: D1D2VDSS 20V G1 G2S1 S2 RDS(on) 20mohm(typ.) ID 4A Marking and pin SOT23-6 Sc he mati c di a gram A s si gnment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge F

Другие MOSFET... SSPL7509 , SSPL7510 , SSPL6005 , SSPL6022 , SSPL6040 , SSPL6040D , SSF80100 , SSF8205 , K3569 , SSF8205U , SSF8205UH2 , SSF8421 , SSF8509 , SSF8521 , SSF8810 , SSF8822 , SSF8N60 .

History: SUP70040E | MTD20N03HDLT4G | R6020ANX | IRFZ48ZS | SWD7N65DA | IPI50N12S3L-15 | IRF7343PBF

 

 
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