Справочник MOSFET. SSF8205U

 

SSF8205U Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF8205U
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 18 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.8 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: SOT23-6
 

 Аналог (замена) для SSF8205U

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF8205U Datasheet (PDF)

 ..1. Size:599K  silikron
ssf8205u.pdfpdf_icon

SSF8205U

SSF8205UMain Product Characteristics: D1D2VDSS 18V G1 G2S1 S2 RDS(on) 20mohm(typ.)ID 4.5A Marking and pin SOT23-6Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

 0.1. Size:612K  silikron
ssf8205uh2.pdfpdf_icon

SSF8205U

SSF8205UH2Main Product Characteristics: D1D2VDSS 18V G1 G2S1 S2 RDS(on) 20mohm(typ.)ID 4.5A Marking and pin TSSOP-8 Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast swit

 7.1. Size:450K  silikron
ssf8205a.pdfpdf_icon

SSF8205U

SSF8205A DESCRIPTION D1D2The SSF8205A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)with gate voltages as low as 0.65V. This device is G1 G2suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram GENERAL FEATURES V = 20V,I = 6A DS DR

 7.2. Size:683K  silikron
ssf8205.pdfpdf_icon

SSF8205U

SSF8205 Main Product Characteristics: D1D2VDSS 20V G1 G2S1 S2 RDS(on) 20mohm(typ.) ID 4A Marking and pin SOT23-6 Sc he mati c di a gram A s si gnment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge F

Другие MOSFET... SSPL7510 , SSPL6005 , SSPL6022 , SSPL6040 , SSPL6040D , SSF80100 , SSF8205 , SSF8205A , 2N7000 , SSF8205UH2 , SSF8421 , SSF8509 , SSF8521 , SSF8810 , SSF8822 , SSF8N60 , SSF8N65 .

History: WTK6679 | JST3400 | NDB7060 | TPC6102 | FHP540A | IRF6722MPBF | IRF7467TR

 

 
Back to Top

 


 
.