SSPL1010 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSPL1010
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 245 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 88 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 20.5 ns
Cossⓘ - Выходная емкость: 440 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO220
- подбор MOSFET транзистора по параметрам
SSPL1010 Datasheet (PDF)
sspl1010.pdf

SSPL1010 Main Product Characteristics: VDSS 100V RDS(on) 8.9mohm(typ.) ID 88A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
sspl1022.pdf

SSPL1022Main Product Characteristics: VDSS 100V RDS(on) 21mohm(typ.)ID 57AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 operating te
sspl1042.pdf

SSPL1042 Main Product Characteristics: VDSS 100V RDS(on) 33mohm(typ.) ID 33A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
sspl1090.pdf

SSPL1090 Main Product Characteristics: VDSS 100V RDS(on) 75m (typ.) ID 17A Mar ki ng a nd p in TO-220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: WMO7N65D1B | RU7550S | AUIRFZ34N | 2N6760JANTXV | AOT402 | IRLML9301TRPBF | STP20NM60FP
History: WMO7N65D1B | RU7550S | AUIRFZ34N | 2N6760JANTXV | AOT402 | IRLML9301TRPBF | STP20NM60FP



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