Справочник MOSFET. MMBT7002VW

 

MMBT7002VW MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMBT7002VW
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 50 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 25 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: SOT323

 Аналог (замена) для MMBT7002VW

 

 

MMBT7002VW Datasheet (PDF)

 ..1. Size:447K  semtech
 mmbt7002vw.pdf

MMBT7002VW MMBT7002VW

MMBT7002VW N-Channel Enhancement Mode Field Effect Transistor Features Drain Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance Gate ESD protected up to 1KV SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS 20 VDrain Current (Continuous) ID 300 mAD

 6.1. Size:701K  semtech
 mmbt7002kw.pdf

MMBT7002VW MMBT7002VW

MMBT7002KW N-Channel Enhancement Mode Field Effect Transistor DrainFeatures Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.DrainSourceSOT-323 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS

 6.2. Size:176K  semtech
 mmbt7002k.pdf

MMBT7002VW MMBT7002VW

MMBT7002K N-Channel Enhancement Mode Field Effect Transistor DrainFeatures Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.DrainSourceTO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS

 6.3. Size:757K  semtech
 mmbt7002e.pdf

MMBT7002VW MMBT7002VW

MMBT7002E N-Channel Enhancement Mode Field Effect Transistor DrainGate1. Gate 2. Source 3. Drain SOT-523 Plastic Package SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID

 6.4. Size:463K  semtech
 mmbt7002w.pdf

MMBT7002VW MMBT7002VW

MMBT7002W N-Channel Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-323 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID Pulsed 800 Total Powe

 6.5. Size:595K  semtech
 mmbt7002dw.pdf

MMBT7002VW MMBT7002VW

MMBT7002DW N-Channel Enhancement Mode Field Effect Transistor 6 5 4TR2TR11.Source 2. Gate 3. Drain 1 2 34. Source 5. Gate 6. DrainSOT-363 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115

 6.6. Size:190K  semtech
 mmbt7002.pdf

MMBT7002VW MMBT7002VW

MMBT7002 N-Channel Enhancement Mode Field Effect Transistor DrainFeatures High density cell design for low RDS(ON) Voltage controlled small signal switching High saturation current capability Gate High speed switching Source 1.Gate 2.Source 3.DrainTO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltag

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