SD-SST211/213/215N-CHANNEL LATERALDMOS SWITCHLinear Integrated Systems ZENER PROTECTEDProduct SummaryFeatures Benefits Applications Ultra-High Speed SwitchingtON: 1 ns High-Speed System Performance Fast Analog Switch Ultra-Low Reverse Capacitance: 0.2 pF Low Insertion Loss at High Frequencies Fast Sample-and-Holds Low Guaranteed rDS @5 V Low Trans

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A, I = 10 mA) CE (sat) C B Zener diode included between

Power Transistors2SD2137, 2SD2137ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1417 and 2SB1417AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity5.0 0.1Low collector to emitter saturation voltage VCE(sat)10.0 0.2 1.0Allowing supply with the radial taping90Absolute Maximum Ratings (TC=25

Power Transistors2SD2136Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmComplementary to 2SB14167.50.2 4.50.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat)0.650.1 0.850.10.8 C 0.8 C1.00.1 Allowing supply with the radial taping0.70.10

Power Transistors2SD2133Silicon NPN epitaxial planar typeFor low-frequency power amplification driverUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat)0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings TC = 25C0.70.10.70.1Parameter Symbol Rating Unit 1.150.21.150.2Collector-base voltage (Emitter op

Power Transistors2SD2138, 2SD2138ASilicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB1418 and 2SB1418A5.0 0.110.0 0.2 1.0Features90 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0

Power Transistors2SD2139Silicon NPN triple diffusion planar typeFor high-current amplification ratio, power amplificationUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0

UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. ORDERING INFORMATION Ordering Number Pin A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors2SD2136 TRANSISTOR (NPN)TO 126 FEATURES High Forward Current Transfer Ratio hFE Which has 1. EMITTERSatisfactory Linearity. 2. COLLECTOR Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 3. BASE Equivalent Circuit D2136=Device

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SD2137A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) 3. EMITTER Allowing Automatic Insertion with Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U

2SD2137(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V

2SD2137(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features High forward current transfer ratio hFE which hassatisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60

AOSD21313C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V)

AOSD2130730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V)

AOSD21311C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD213DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applic

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2137DESCRIPTIONSilicon NPN triple diffusion planar typeComplementary to 2SB1417Low Collector to Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAllowing supply with the radial tapingAPPLICATIONSDesigned for power amplifiersABSOLUTE MAXIMUM RATING

isc Silicon NPN Power Transistor 2SD2137ADESCRIPTIONCollectorEmitter Sustaining VoltageV 80 V(Min)CEO:Low Collector Saturation Voltage: V = 1.2V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB