FTA10N60C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FTA10N60C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 170 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
Тип корпуса: TO220F
FTA10N60C Datasheet (PDF)
ftp10n60c fta10n60c.pdf
FTP10N60CFTA10N60CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor TV Main Power600 V 0.85 10 A SMPS Power Supply LCD Panel Power DFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveG GGOrdering InformationDSDS TO-220FTO-220 SPART NUMBE
ftp10n40 fta10n40.pdf
FTP10N40/FTA10N40400V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 400V 0.50 10A Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Applications High Efficiency SMPS Adaptor/Charger LCD Panel Power Switching application Ordering Information Part Number Package Marking F
fta1023.pdf
SEMICONDUCTORFTA1023TECHNICAL DATAFTA1023 TRANSISTOR (PNP) BFEATURES Complementary to FTC1027 EDIM MILLIMETERSA 8.2 MAXDB 5.1 MAXC 1.58 MAXD 0.55 MAXMAXIMUM RATINGS (TaB=25 unless otherwise noted) E 0.7 TYPF 1.27 TYPG 2.54 TYPSymbol Parameter Value UnitFH 14.20 MAX GJ 0.45 MAX VCBOB Collector-Base Voltage -120 V L 4.10 MAX VCEOB Collector-Emitte
fta1020 to92l.pdf
SEMICONDUCTORFTA1020TECHNICAL DATAFEATURES B Power Amplifier Applications Complementary to FTC26555 EDIM MILLIMETERSMAXIMUM RATINGS (Ta=25 unless otherwise noted) A 8.2 MAXDB 5.1 MAXSymbol Parameter Value Unit C 1.58 MAXD 0.55 MAXE 0.7 TYPVCBO Collector-Base Voltage -50 V F 1.27 TYPG 2.54 TYPVCEO Collector-Emitter Voltage -50 V FH 14.20 MAX G
fta1015.pdf
SEMICONDUCTORFTA1015TECHNICAL DATAB CFEATURES TO-92 PNP TransistorDIM MILLIMETERSA 4.70 MAXEMAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAXGC 3.70 MAXDD 0.55 MAXSymbol Parameter Value Units E 1.00F 1.27VCBO Collector-Base Voltage -50 V G 0.85H 0.45_HJ 14.00 + 0.50VCEO Collector-Emitter Voltage -50 V L 2.30F FM 0.51 MAXVEBO Emit
fta1036k.pdf
SEMICONDUCTORFTA1036KTECHNICAL DATAMedium Power Transistor( 32V, 0.5A)Features1) Large IC.I = 500mACMax332) Low V . Ideal for low-voltageCE(sat)operation.13) We declare that the material of productcompliance with RoHS requirements.122StructureEpitaxial planar typePNPSOT-23PNP silicon transistorDEVICE MARKING1) FTA1036K-P = HP2) FTA1036K-Q
fta1037ak.pdf
SEMICONDUCTORFTA1037AKTECHNICAL DATAGeneral Purpose TransistorsPNP SiliconORDERING INFORMATION3ShippingDevice PackageFTA1037AK SOT23 3000/Tape & Reel21 SOT 23 MAXIMUM RATINGSParameter Symbol Value Unit3COLLECTORCollectorEmitter Voltage VCEO -50 VCollectorBase Voltage VCBO -60 V1BASEEmitterBase Voltage VEBO -6.0 VCollector Current Conti
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918