Справочник MOSFET. SPP80N03S2-03

 

SPP80N03S2-03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPP80N03S2-03
   Маркировка: 2N0303
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 300 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 80 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 5.2 nC
   Время нарастания (tr): 325 ns
   Выходная емкость (Cd): 2420 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0034 Ohm
   Тип корпуса: TO220

 Аналог (замена) для SPP80N03S2-03

 

 

SPP80N03S2-03 Datasheet (PDF)

 ..1. Size:456K  infineon
spi80n03s2-03 spp80n03s2-03 spb80n03s2-03.pdf

SPP80N03S2-03
SPP80N03S2-03

www.DataSheet4U.com SPI80N03S2-03SPP80N03S2-03,SPB80N03S2-03OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3.1 m Enhancement modeID 80 A Excellent Gate Charge x RDS(on) product (FOM)P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175C operating temperature Avalanche rated

 4.1. Size:1408K  cn vbsemi
spp80n03s2l.pdf

SPP80N03S2-03
SPP80N03S2-03

SPP80N03S2Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop View

 7.1. Size:208K  1
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf

SPP80N03S2-03
SPP80N03S2-03

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 7.2. Size:88K  siemens
buz110s spp80n05.pdf

SPP80N03S2-03
SPP80N03S2-03

BUZ 110 SSPP80N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

 7.3. Size:77K  siemens
buz111sl spp80n05l.pdf

SPP80N03S2-03
SPP80N03S2-03

BUZ111SLSPP80N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

 7.4. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdf

SPP80N03S2-03
SPP80N03S2-03

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

 7.5. Size:311K  infineon
spp80n06s2l-09 spb80n06s2l-09.pdf

SPP80N03S2-03
SPP80N03S2-03

SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2

 7.6. Size:311K  infineon
spp80n06s2l-h5 spb80n06s2l-h5.pdf

SPP80N03S2-03
SPP80N03S2-03

SPP80N06S2L-H5SPB80N06S2L-H5OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 5 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-H5 P- TO220 -3-1 Q67060-S60542N06LH5SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055 2N06LH5Maximum Ratings, a

 7.7. Size:516K  infineon
spb80n06s2-09 spp80n06s2-09.pdf

SPP80N03S2-03
SPP80N03S2-03

SPP80N06S2-09Preliminary dataSPB80N06S2-09OptiMOS =Power-Transistor===Product SummaryFeatureVDS55 V N-ChannelRDS(on) 9.1 m Enhancement modeID 80 A 175C operating temperatureP-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-09 P-TO220-3-1 Q67060-S60252N0609SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609Maxi

 7.8. Size:308K  infineon
spp80n06s2l-07 spb80n06s2l-07.pdf

SPP80N03S2-03
SPP80N03S2-03

SPP80N06S2L-07SPB80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 7 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-07 P- TO220 -3-1 Q67040-S42852N06L07SPB80N06S2L-07 P- TO263 -3-2 Q6

 7.9. Size:314K  infineon
spp80n08s2l spb80n08s2l.pdf

SPP80N03S2-03
SPP80N03S2-03

SPP80N08S2L-07SPB80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N08S2L-07 P- TO220 -3-1 Q67060-S60152N08L07SPB80N08S2L-

 7.10. Size:419K  infineon
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf

SPP80N03S2-03
SPP80N03S2-03

SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -

 7.11. Size:205K  infineon
spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf

SPP80N03S2-03
SPP80N03S2-03

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 7.12. Size:221K  infineon
spi80n06s-80 spp80n06s-08.pdf

SPP80N03S2-03
SPP80N03S2-03

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

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History: STP160N3LL

 

 
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