P0403BVG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P0403BVG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 80 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 1000 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
Тип корпуса: SOP8
P0403BVG Datasheet (PDF)
p0403bvg.pdf
P0403BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.5m @VGS = 10V30V 18ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30VVGSGate-Source Voltage 20TA = 25 C18IDContinuous Drain CurrentTA = 70 C15AIDM80Pulsed Drain Current1
p0403bv.pdf
P0403BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 4.5m @VGS = 10V 18ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C18IDContinuous Drain CurrentTA = 70 C15AIDM70Pulsed Drain Current1
p0403bda.pdf
P0403BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.6m @VGS = 10V30V 77ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C77IDContinuous Drain Current2TC= 100 C50AIDM200Pulsed Drain Current
p0403bd.pdf
P0403BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.3m @VGS = 10V30V 81ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C81IDContinuous Drain CurrentTC = 100 C51AIDM200Pulsed Drain Current
p0403bt.pdf
P0403BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 4m @VGS = 10V 112ATO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C112IDContinuous Drain Current2TC = 100 C71AIDM200Pulsed Drain Current1IASAvalanche Current 44
p0403bdg.pdf
P0403BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4m @VGS = 10V25V 84ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC= 25 C84IDContinuous Drain CurrentTC= 100 C67AIDM200Pulsed Drain Current1
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