P7004EV - описание и поиск аналогов

P7004EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 70m @VGS = -10V -4A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TA = 25 C -4 ID Continuous Drain Current TA = 70 C -3.2 A IDM -20 Pulsed Drain Curr

P7004EM P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 70m @VGS = -10V -40V -2.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TA = 25 C -2.5 ID Continuous Drain Current TA = 70 C -2 A IDM -20 Pu

SUP70040E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature 0.0040 at VGS = 10 V 120 100 76 100 % Rg and UIS tested 0.0046 at VGS = 7.5 V 120 Material categorization for definitions of compliance please see TO-220AB

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUP70040E FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE MAXIMU