P7004EV - параметры транзистора MOSFET, его аналоги, datasheet

P7004EV Datasheet (PDF)

..1. Size:338K unikc
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P7004EVP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-40V 70m @VGS = -10V -4ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TA = 25 C-4IDContinuous Drain CurrentTA = 70 C-3.2AIDM-20Pulsed Drain Curr

8.1. Size:673K unikc
p7004em.pdf pdf_icon

P7004EMP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID70m @VGS = -10V-40V -2.5ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TA = 25 C-2.5IDContinuous Drain CurrentTA = 70 C-2AIDM-20Pu

9.1. Size:147K vishay
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SUP70040Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature0.0040 at VGS = 10 V 120100 76 100 % Rg and UIS tested0.0046 at VGS = 7.5 V 120 Material categorization:for definitions of compliance please see TO-220AB

9.2. Size:238K inchange semiconductor
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUP70040EFEATURESTrenchFET Power MOSFET175 C Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONPower Supply- Secondary Synchronous RectificationPower toolsMotor drive switchBattery managementABSOLUTE MAXIMU

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