P45N02LDG - описание и поиск аналогов

P45N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 20m @VGS = 10V 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 32 ID Continuous Drain Current1 TC = 100 C 20 A IDM 110 Pulsed Drain Curren

P45N02LI N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 25V 26A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 26 ID Continuous Drain Current TC = 100 C 16 A IDM 70 Pulsed Drain Current1 IAS Avalanche Cu

UNISONIC TECHNOLOGIES CO., LTD UTP45N02 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. FEATURES * 45A, 20V * RDS(ON) = 0.022 * Temperature compensating PSPICE model * Be driven directly from CMOS, NMO

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 45 A features very low on-state r

PHP45N03LT; PHB45N03LT; PHD45N03LT N-channel TrenchMOS transistor Rev. 06 05 October 2000 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP45N03LT in SOT78 (TO-220AB) PHB45N03LT in SOT404 (D2-PAK) PHD45N03LT in SOT428 (D-PAK). 2. Features Low on-state resistance

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal

PHP/PHB/PHD45N03LTA N-channel enhancement mode field-effect transistor Rev. 02 02 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). 2. Features Low on-state resistance

PHP45N03LT; PHB45N03LT; PHD45N03LT N-channel TrenchMOS transistor Rev. 06 05 October 2000 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP45N03LT in SOT78 (TO-220AB) PHB45N03LT in SOT404 (D2-PAK) PHD45N03LT in SOT428 (D-PAK). 2. Features Low on-state resistance

Preliminary Data Sheet NP45N06VUK, NP45N06PUK R07DS0953EJ0100 60 V 45 A N-channel Power MOS FET Rev.1.00 Application Automotive Nov 20, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A) Low Ciss Ci

RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power Features MOSFETs 45A, 60V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.028 power field effect transistors. They are advanced power Temperature Compensating PSPICE Model MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

SUP/SUB45N05-20L Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 "45 a " 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N05-20L Top View N-Channel MOSFET SUP45N05-20L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol

SUP/SUB45N05-20L Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 "45 a " 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N05-20L Top View N-Channel MOSFET SUP45N05-20L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol

SUP45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 30 0.02 @ VGS = 4.5 V 45a D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP45N03-13L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 Gate-Source Volt

IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 9.2 m DS(on),max I 45 A D Features N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB45N06S4-09 PG-TO263-

IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.9 m DS(on),max I 45 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 7.6 m DS(on),max I 45 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ

NTP45N06L, NTB45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 45 AMPERES, 60 VOLTS circuits. RDS(on) = 28 mW Features N-Channel Higher Current Rating D Lower RDS(on) Lower VDS(on) Lower Capa

NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features Higher Current Rating 45 AMPERES, 60 VOLTS Lower RDS(on) RDS(on) = 26 mW Lower VDS(on) Lower Capacitances N-Channel Lower

NTP45N06L, NTB45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 45 AMPERES, 60 VOLTS circuits. RDS(on) = 28 mW Features N-Channel Higher Current Rating D Lower RDS(on) Lower VDS(on) Lower Capa

RFP45N06LE, RF1S45N06LESM Data Sheet October 1999 File Number 4076.2 45A, 60V, 0.028 Ohm, Logic Level Features N-Channel Power MOSFETs 45A, 60V These are N-Channel enhancement mode power MOSFETs rDS(ON) = 0.028 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approaching those

P45N03LTFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 25V 36A TO-220F ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 36 ID Continuous Drain Current TC = 100 C 22 A IDM 140 Pulsed Drain Curr

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP45N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 175 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipation Tc

SMDTypee Ior DIP Type Tra n s is tICs SMD Type SMD Type SMDType C Typ SMD DIP Type IC Product specification KHP45N03LT TO220 Features Low on-state resistance Fast switching. 1Gate 2Drain 3Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 15 Drain current (DC) ID 45 A Power Dissipation PD 86 W therma

December 2014 BVDSS = 60 V RDS(on) typ = 3.7m HRP45N06K ID = 150 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 120 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 3.7 m (Typ.

December 2014 BVDSS = 80 V RDS(on) typ = 3.6m HRP45N08K ID = 150 A 80V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 155nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 3.6 m (Typ.)