P0603BV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P0603BV
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 50 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 567 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.006 Ohm
Тип корпуса: SOP8
P0603BV Datasheet (PDF)
p0603bv.pdf
P0603BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 6m @VGS = 10V 16ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C16IDContinuous Drain CurrentTA = 70 C13AIDM70Pulsed Drain Current1I
p0603bvg.pdf
P0603BVGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
p0603bd.pdf
P0603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 5.8m @VGS = 10V 70ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C70IDContinuous Drain CurrentTC = 100 C44AIDM180Pulsed Drain Current1
p0603bdb.pdf
P0603BDBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 72ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C72IDContinuous Drain Current2TC= 100 C46AIDM160Pulsed Drain Current1IASAvalanche Current 50E
p0603bdg.pdf
P0603BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.5m @VGS = 10V30V 68ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C68IDContinuous Drain CurrentTC= 100 C43AIDM180Pulsed Drain Current1
p0603bk.pdf
P0603BKN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 6m @VGS = 10V 30APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C(Package Limited)30TC = 25 IDC(Silicon Limited)80Continuous Drain Current2
p0603bt.pdf
P0603BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 5.8m @VGS = 10V 82ATO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C82IDContinuous Drain Current1TC = 100 C52AIDM200Pulsed Drain Curren
p0603bdl.pdf
P0603BDLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 6.8m @VGS = 10V 68ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC = 25 C68IDContinuous Drain Current1TC = 100 C43AIDM160Pulsed Drain Curren
p0603bdf.pdf
P0603BDFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 78ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C78IDContinuous Drain Current2TC= 100 C49AIDM140Pulsed Drain Current1IASAvalanche Current 35E
p0603bead.pdf
P0603BEADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 56APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20 TC = 25 C56 TC = 100 C35IDContinuous Drain Current1,2 TA = 25 C14.5A
p0603bdd.pdf
P0603BDDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 71ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C71IDContinuous Drain Current2TC= 100 C45AIDM180Pulsed Drain Current1IASAvalanche Current 41E
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