Справочник MOSFET. P06P03LVG

 

P06P03LVG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: P06P03LVG
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 135 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: SOP8
     - подбор MOSFET транзистора по параметрам

 

P06P03LVG Datasheet (PDF)

 ..1. Size:816K  unikc
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P06P03LVG

P06P03LVGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = -10V-30V -6ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-6IDContinuous Drain CurrentTA = 70 AC-5IDM-30Pulse

 ..2. Size:370K  niko-sem
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P06P03LVG

P06P03LVGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -6ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-6IDContinuous Drain CurrentTA = 70 AC-5IDM-30Pulsed Drain Curre

 7.1. Size:315K  1
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P06P03LVG

P-Channel Logic Level Enhancement P06P03LCGNIKO-SEM Mode Field Effect Transistor SOT-89Lead-FreeDPRODUCT SUMMARY 1. GATE V(BR)DSS RDS(ON) ID 2. DRAIN G3. SOURCE-30 45m -4A SABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VTC = 25 C -4

 7.2. Size:480K  unikc
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P06P03LVG

P06P03LCGAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = -10V-30V -4ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-4IDContinuous Drain CurrentTA = 70 C-3AIDM-20Pulsed Drain Cur

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFSL11N50A | SIHG47N60S | GWM180-004X2-SL | 9N95 | AP3310GJ-HF | APT1201R4BFLL | HGI110N08AL

 

 
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