P0770ETF - аналоги, параметры транзистора - Справочник транзисторов

P0770ETF технические параметры

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P0770ETF / P0770ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.4 @VGS = 10V 700V 7A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage 30 TC = 25 C 7 ID Continuous Drain Current2 TC = 100 C 4 A IDM 2

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P0770EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.5 @VGS = 10V 700V 7A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage 30 V TC= 25 C 7 ID Continuous Drain Current2 TC= 100 C 4.4 A IDM 20 Pulsed Drain Current1

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P0770EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.5 @VGS = 10V 700V 7A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage 30 V TC= 25 C 7 ID Continuous Drain Current2 TC= 100 C 4.4 A IDM 20 Pulsed Drain Cur

8.3. Size:193K niko-sem
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N-Channel Enhancement Mode P0770EI NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 700V 1.5 7A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC = 25 C 7