P0908AT - описание и поиск аналогов

P0908AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 80V 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 20 TC = 25 C 64 ID Continuous Drain Current TC = 100 C 41 A IDM 160 Pulsed Drain Current1

P0908ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 80V 43A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 43 ID Continuous Drain Current2 TC = 100 C 27 A IDM 160 Pulsed Drain Current1,2 IAS Avalanche Current 38

N-Channel Enhancement Mode P0908ATF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 43A G 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 43 Continuous Drain Current2 ID T

P0908AD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 80V 69A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 69 ID Continuous Drain Current3 TC= 100 C 44 A IDM 160 Pulsed Drain Current1,2 IAS Avalanche Cu

N-Channel Logic Level Enhancement P0908AD NIKO-SEM TO-252 Mode Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 69A G 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 69 Continuous Drain Current