Справочник MOSFET. P0908AT

 

P0908AT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P0908AT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 64 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 55 nC
   trⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 355 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO220

 Аналог (замена) для P0908AT

 

 

P0908AT Datasheet (PDF)

 ..1. Size:568K  unikc
 p0908at.pdf

P0908AT P0908AT

P0908ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 64ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 20TC = 25 C64IDContinuous Drain CurrentTC = 100 C41AIDM160Pulsed Drain Current1

 0.1. Size:810K  unikc
 p0908atf.pdf

P0908AT P0908AT

P0908ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 43ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C43IDContinuous Drain Current2TC = 100 C27AIDM160Pulsed Drain Current1,2IASAvalanche Current 38

 0.2. Size:172K  niko-sem
 p0908atf.pdf

P0908AT P0908AT

N-Channel Enhancement Mode P0908ATFNIKO-SEM Field Effect Transistor TO-220FHalogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 43A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 43 Continuous Drain Current2 ID T

 8.1. Size:798K  unikc
 p0908ad.pdf

P0908AT P0908AT

P0908ADN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 69ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C69IDContinuous Drain Current3TC= 100 C44AIDM160Pulsed Drain Current1,2IASAvalanche Cu

 8.2. Size:179K  niko-sem
 p0908ad.pdf

P0908AT P0908AT

N-Channel Logic Level Enhancement P0908ADNIKO-SEM TO-252Mode Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 69A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 69 Continuous Drain Current

 8.3. Size:243K  niko-sem
 p0908ak.pdf

P0908AT P0908AT

N-Channel Enhancement Mode P0908AKNIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G80V 9m 50A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 80 VGate-Source Voltage VGS

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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