P0920AD - аналоги, параметры транзистора - Справочник транзисторов

P0920AD технические параметры

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P0920AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 0.42 @VGS = 10V 9A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 9 ID Continuous Drain Current TC = 100 C 5.8 A IDM 36 Pulsed Drain Current1, 2 IAS Avalanche Current 9 E

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P0920AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 0.42 @VGS = 10V 9A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 9 ID Continuous Drain Current TC = 100 C 5.8 A IDM 36 Pulsed Drain Current1, 2 IAS Avalanche Current 9 E

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P0920ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.42 @VGS = 10V 200V 9A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage 20 TC = 25 C 9 ID Continuous Drain Current2 TC = 100 C 5 A IDM 22 Pulsed Drain Curr

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P0920BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.42 @VGS = 10V 200V 9A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 9 ID Continuous Drain Current TC = 100 C 5 A IDM 31 Pulsed Drain Current1 IAS Avalanche Current 9 EAS

Другие MOSFET... P0903BV , P0903BVA , P0908AD , P0908AT , P0908ATF , P0910AS , P0910ATF , P0910ATG , 12N60 , P0920AT , P0920ATF , P0920BD , P0925AD , P0925BTF , P092ABD , P0950ETF , P0950ETFS .