Справочник MOSFET. P1203ED

 

P1203ED MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P1203ED
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 49 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 52 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 57 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 451 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO252

 Аналог (замена) для P1203ED

 

 

P1203ED Datasheet (PDF)

 ..1. Size:585K  unikc
 p1203ed.pdf

P1203ED P1203ED

P1203EDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = -10V-30V -52ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C-52IDContinuous Drain CurrentTC = 100 C-33AIDM-150Pulsed Drain C

 ..2. Size:839K  cn vbsemi
 p1203ed.pdf

P1203ED P1203ED

P1203EDwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.011 at VGS = - 10 V 50RoHS*- 30COMPLIANT0.013 at VGS = - 4.5 V 45STO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGate

 8.1. Size:904K  unikc
 p1203eea.pdf

P1203ED P1203ED

P1203EEAP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = -10V -30V -40APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25 TC = 25 C-40 TC = 100 C-25IDContinuous Drain Current2 TA = 25

 8.2. Size:349K  unikc
 p1203evg.pdf

P1203ED P1203ED

P1203EVGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 12m @VGS = -10V -12ASOP- 08100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-12IDContinuous Drain CurrentTA = 70 C-9AIDM-50

 8.3. Size:513K  unikc
 p1203ek.pdf

P1203ED P1203ED

P1203EKP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = 10V-30V -40APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C-40TC = 100 C-25IDContinuous Drain CurrentTA = 25 C

 8.4. Size:492K  unikc
 p1203ev.pdf

P1203ED P1203ED

P1203EVP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = -10V-30V -10ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-10IDContinuous Drain CurrentTA = 70 C-8.3AIDM-90Pu

 8.5. Size:503K  niko-sem
 p1203eea.pdf

P1203ED P1203ED

P-Channel Logic Level Enhancement Mode P1203EEA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID GG : GATE -30V 12m -40A D : DRAIN S : SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V G

 8.6. Size:826K  cn vbsemi
 p1203evg.pdf

P1203ED P1203ED

P1203EVGwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

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