P1504BVG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P1504BVG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24.8 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 252 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: SOP8
P1504BVG Datasheet (PDF)
p1504bvg.pdf
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P1504BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V40V 9ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C9IDContinuous Drain CurrentTA = 70 C7.5AIDM35Pulsed Drain Current1IASAvalanche Current 32EAS
p1504bdg.pdf
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P1504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V40V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C40IDContinuous Drain CurrentTC = 100 C25AIDM85Pulsed Drain Current1
p1504edg.pdf
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P1504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-45A-40V100% Rg tested100% UIS testedTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40 VVGSGate-Source Voltage 20 VTA= 25 C-45IDContinuous Drain CurrentTA= 70 C
p1504hv.pdf
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P1504HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID23m @VGS = 10V40V 7A100% UIS testedSOP-8 100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 25TA = 25 C7IDContinuous Drain CurrentTA= 100 C4A
p1504eis.pdf
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P1504EISP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-40V -38A100% Rg tested100% UIS testedTO-251(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-38IDContinuous Drain CurrentTC = 100
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![P1504BVG](https://alltransistors.com/images/us.png)
![P1504BVG](https://alltransistors.com/images/es.png)
![P1504BVG](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: NCES120R018T4 | NCES120P075T4 | NCES120P035T4 | NCES075R026T4 | NCES075R026T | NCEP60ND60G | NCEP60ND30AG | NCEP40T14A | NCEP40ND80G | NCEP1580F | NCEP023NH85GU | NCEP023NH85AGU | NCEP018NH30QU | NCEP015NH30GU | NCEP015NH30AQU | NCEP015NH30AGU