Справочник MOSFET. P1603BVA

 

P1603BVA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: P1603BVA

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 2.2 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 2.5 V

Максимально допустимый постоянный ток стока |Id|: 9.4 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 14.6 nC

Время нарастания (tr): 13 ns

Выходная емкость (Cd): 75 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm

Тип корпуса: SOP8

Аналог (замена) для P1603BVA

 

 

P1603BVA Datasheet (PDF)

..1. p1603bva.pdf Size:473K _unikc

P1603BVA
P1603BVA

P1603BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V30V 9.4ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C9.4IDContinuous Drain CurrentTA = 70 C7.5AIDM50Pulsed Drain Current

7.1. p1603bv.pdf Size:336K _unikc

P1603BVA
P1603BVA

P1603BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 16m @VGS = 10V 10ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C10IDContinuous Drain CurrentTA = 70 C8AIDM55Pulsed Drain Current1IASAvalanche Current 23EAS

8.1. p1603beba.pdf Size:456K _unikc

P1603BVA
P1603BVA

P1603BEBAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.8ATA=

8.2. p1603beb.pdf Size:221K _unikc

P1603BVA
P1603BVA

P1603BEBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 21APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C21TC = 100 C17IDContinuous Drain Current3TA = 25 C8ATA= 70

 8.3. p1603bd.pdf Size:534K _unikc

P1603BVA
P1603BVA

P1603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 10V30V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C40IDContinuous Drain CurrentTC= 100 C32AIDM150Pulsed Drain Current1

8.4. p1603bebb.pdf Size:681K _unikc

P1603BVA
P1603BVA

P1603BEBBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.2ATA=

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