Справочник MOSFET. P2003BT

 

P2003BT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P2003BT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 39 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 184 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO220

 Аналог (замена) для P2003BT

 

 

P2003BT Datasheet (PDF)

 ..1. Size:475K  unikc
 p2003bt.pdf

P2003BT P2003BT

P2003BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 39ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C39IDContinuous Drain CurrentTC = 100 C25AIDM120Pulsed Drain Current1

 8.1. Size:341K  unikc
 p2003bea.pdf

P2003BT P2003BT

P2003BEAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 10APDFN 3x3SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS30VGate-Source Voltage VGS20 TC = 25 C28 TC = 100 C18IDContinuous Drain Current TA = 25 C10A TA =

 8.2. Size:523K  unikc
 p2003beaa.pdf

P2003BT P2003BT

P2003BEAAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 25APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20Tc = 25 C25Tc = 100 C16IDContinuous Drain CurrentTA = 25 C8ATA= 70

 8.3. Size:500K  unikc
 p2003bvg.pdf

P2003BT P2003BT

P2003BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 9ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 25TA = 25 C9IDContinuous Drain CurrentTA = 70 C7AIDM32Pulsed Drain Current1IAS

 8.4. Size:468K  unikc
 p2003bdg.pdf

P2003BT P2003BT

P2003BDGN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V25V 28ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC= 25 C28IDContinuous Drain CurrentTC= 100 C18AIDM90Pulsed Drai

 8.5. Size:499K  unikc
 p2003be.pdf

P2003BT P2003BT

P2003BEN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 7APDFN 3x3SABSOLUTE MAXIMUM RATINGS (TJ = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20 TC = 25 C25 TC = 100 C15IDContinuous Drain Current TA = 25 C7A TA = 70

 8.6. Size:547K  unikc
 p2003bvt.pdf

P2003BT P2003BT

P2003BVTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 9A100% Rg tested100% UIS testedSOP-8ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C9IDContinuous Drain CurrentTA = 70 C7AID

 8.7. Size:475K  unikc
 p2003bv.pdf

P2003BT P2003BT

P2003BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 8.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C8.5IDContinuous Drain CurrentTA = 70 C6.8AIDM30Pulsed Drain Current1IASAvalanche Current 17

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