P3010BV datasheet, подбор замены

 ..1. Size:449K  unikc
 p3010bv.pdf 

P3010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30m @VGS = 10V 100V 5.8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V VGS Gate-Source Voltage 20 TA = 25 C 5.8 ID Continuous Drain Current TA = 70 C 4.6 A IDM 37 Pulsed Drain Current

 ..2. Size:656K  niko-sem
 p3010bv.pdf 

P3010BV N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 30m 5.8A G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TA = 2

 9.1. Size:270K  1
 dmp3010lpsq-13.pdf 

DMP3010LPSQ Green P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications V(BR)DSS RDS(ON) TA = +25 C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On-State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

 9.2. Size:148K  diodes
 dmp3010lps.pdf 

DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID High Conversion Efficiency V(BR)DSS RDS(ON) TA = 25 C (Note 5) Low Minimizes On State Losses RDS(on) Low Input Capacitance 7.5m @ VGS = -10V -36A Fast Switching Speed -30V

 9.3. Size:396K  diodes
 dmp3010lpsq.pdf 

DMP3010LPSQ Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TA = +25 C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

 9.4. Size:232K  diodes
 dmp3010lk3.pdf 

DMP3010LK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed "Green" Device (Note 1) 8m @ VGS = -10V -17A -30V Qualified to AEC-Q101 Standards for High Reliability 10.2m @ VGS = -4.5V -14.5A Mechanical Data Description and Appl

 9.5. Size:2285K  allpower
 ap3010.pdf 

 9.6. Size:400K  jiejie micro
 jmtp3010d.pdf 

JMTP3010D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 30V, 12A Load Switch RDS(ON)

 9.7. Size:1755K  cn vbsemi
 dmp3010lps.pdf 

DMP3010LPS www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.004 at VGS = - 10 V - 120 COMPLIANT - 30 130 nC 100 % Rg Tested 0.006 at VGS = - 4.5 V - 100 APPLICATIONS Notebook - Load Switch S DFN5X6 Top View Top View Bottom View 1 8 G 2 7 3 6 4

 9.8. Size:265K  inchange semiconductor
 dmp3010lk3.pdf 

isc P-Channel MOSFET Transistor DMP3010LK3 FEATURES Drain Current I = -17A@ T =25 D C Drain Source Voltage- V = -30V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur