Справочник MOSFET. P2504BDG

 

P2504BDG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P2504BDG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 41.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7.2 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: TO252

 Аналог (замена) для P2504BDG

 

 

P2504BDG Datasheet (PDF)

 ..1. Size:487K  unikc
p2504bdg.pdf

P2504BDG
P2504BDG

P2504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25m @VGS = 10V40V 32ATO-252100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C32IDContinuous Drain CurrentTC = 100 C20

 9.1. Size:245K  diodes
zxtp25040dfh.pdf

P2504BDG
P2504BDG

ZXTP25040DFH40V SOT23 PNP medium power transistorSummaryBVCEO > -40VBVECO > -3V ;IC(CONT) = -3ARCE(sat) = 55 m ;VCE(sat)

 9.2. Size:178K  diodes
zxtp25040dfl.pdf

P2504BDG
P2504BDG

A Product Line ofA Product Line ofDiodes IncorporatedDiodes IncorporatedZXTP25040DFL 40V PNP LOW POWER TRANSISTOR IN SOT23TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 BVECO > --3V Case Material: Molded Plastic, Green Molding Compound Case Material: Molded Plastic, Green Molding Compound IC = -1.5A Continuous Collec

 9.3. Size:584K  diodes
zxtp25040dz.pdf

P2504BDG
P2504BDG

ZXTP25040DZ 40V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case: SOT89 IC = -3.5A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)

 9.4. Size:499K  unikc
p2504ei.pdf

P2504BDG
P2504BDG

P2504EIP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -30A TO-251ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-30IDContinuous Drain CurrentTC = 70 AC-24IDM-65Pu

 9.5. Size:493K  unikc
p2504edg.pdf

P2504BDG
P2504BDG

P2504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -18ATO-252100% UIS tested100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-18IDContinuous Drain CurrentTC = 100 A

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