P2504BDG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P2504BDG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 41.6 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 32 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 16 nC
Время нарастания (tr): 7.2 ns
Выходная емкость (Cd): 165 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.025 Ohm
Тип корпуса: TO252
P2504BDG Datasheet (PDF)
p2504bdg.pdf
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P2504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25m @VGS = 10V40V 32ATO-252100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C32IDContinuous Drain CurrentTC = 100 C20
zxtp25040dfh.pdf
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ZXTP25040DFH40V SOT23 PNP medium power transistorSummaryBVCEO > -40VBVECO > -3V ;IC(CONT) = -3ARCE(sat) = 55 m ;VCE(sat)
zxtp25040dfl.pdf
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A Product Line ofA Product Line ofDiodes IncorporatedDiodes IncorporatedZXTP25040DFL 40V PNP LOW POWER TRANSISTOR IN SOT23TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 BVECO > --3V Case Material: Molded Plastic, Green Molding Compound Case Material: Molded Plastic, Green Molding Compound IC = -1.5A Continuous Collec
zxtp25040dz.pdf
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ZXTP25040DZ 40V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case: SOT89 IC = -3.5A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)
p2504ei.pdf
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P2504EIP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -30A TO-251ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-30IDContinuous Drain CurrentTC = 70 AC-24IDM-65Pu
p2504edg.pdf
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P2504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -18ATO-252100% UIS tested100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-18IDContinuous Drain CurrentTC = 100 A
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SSM9960GH
History: SSM9960GH
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![P2504BDG](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C