P2806HV - параметры транзистора MOSFET, его аналоги, datasheet

P2806HV Datasheet (PDF)

..1. Size:340K unikc
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P2806HVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 28m @VGS = 10V 6ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TA = 25 C6IDContinuous Drain CurrentTA = 70 C5AIDM30Pulsed Drain Current1IAS

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P2806HVwww.VBsemi.comDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

9.1. Size:380K unikc
p2806atf.pdf pdf_icon

P2806ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 30m @VGS = 10V 27ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C27IDContinuous Drain CurrentTC = 100 C17AIDM105Pulsed Drain Current1IASAvalanche Current 29E

9.2. Size:478K unikc
p2806bv.pdf pdf_icon

P2806BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V60V 7ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 60VVGSGate-Source Voltage 20TA = 25 C7IDContinuous Drain CurrentTA = 70 C5AIDM35Pulsed Drain Current1IAS