P2803BMG - Даташиты. Аналоги. Основные параметры

P2803BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 28m @VGS = 10V 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 6 ID Continuous Drain Current TA = 70 C 4 A IDM 30 Pulsed Drain Current1 IAS Avalanche Current 21 L = 0.

P2803HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 27.5m @VGS = 10V 6.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 6.5 ID Continuous Drain Current2 TA = 70 C 5 A IDM 30 Pulsed Drain Curre

P2803NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 27.5m @VGS = 10V 30V 7A N 34m @VGS = -10V -30V -6A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 7 TC = 25 C P -6 ID Co

150A 30V KNX2803A N-CHANNEL MOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =2.2m typ. @ V =10V DS(on) GS Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant 2. Features KNX2803A designed by the trench processing techniques to achieve extremely l

150A 30V KNX2803A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =2.2m typ. @V =10V DS(on) GS LowOn-Resistance Fast Switching 100%AvalancheTested RepetitiveAvalancheAllowed up toTjmax Lead-Free, RoHSCompliant 2. Features KNX2803A designed by the trench processing techniques to achieve extremely low on-resistance. Addition