Справочник MOSFET. P5015BTF

 

P5015BTF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P5015BTF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 230 ns
   Cossⓘ - Выходная емкость: 182 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для P5015BTF

 

 

P5015BTF Datasheet (PDF)

 ..1. Size:466K  unikc
 p5015btf.pdf

P5015BTF P5015BTF

P5015BTFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V150V 18ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20Tc = 25 C18IDContinuous Drain CurrentTc = 100 C11AIDM80Pulsed Drain Curre

 8.1. Size:473K  unikc
 p5015bd.pdf

P5015BTF P5015BTF

P5015BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V150V 24ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TC = 25 C24IDContinuous Drain Current1TC = 100 C15AIDM90Pulsed Drain Curren

 9.1. Size:50K  motorola
 tp5015re.pdf

P5015BTF P5015BTF

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5015/DThe RF LineUHF Linear Power TransistorTP5015. . . designed for 24 Volt UHF largesignal common emitter amplifier applica-tions in industrial and commercial FM equipment operating in the 380 to512 MHz frequency range, i.e., cellular radio base stations. 380512 MHz 15 W Pout 24 V VCC 15

 9.2. Size:346K  unikc
 p5015atf.pdf

P5015BTF P5015BTF

P5015ATF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 50m @VGS = 10V 22ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C22IDContinuous Drain Current2TC = 100 C14AIDM90Pulsed Drain Current1IASAvalanche Current 26

 9.3. Size:208K  niko-sem
 p5015cd.pdf

P5015BTF P5015BTF

N-Channel Enhancement Mode P5015CD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G150V 50m 23A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 12 V TC =

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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