Справочник MOSFET. P6006HV

 

P6006HV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P6006HV
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для P6006HV

 

 

P6006HV Datasheet (PDF)

 ..1. Size:466K  unikc
 p6006hv.pdf

P6006HV P6006HV

P6006HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V60V 4.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60 VVGSGate-Source Voltage 20 VTA = 25 C4.5IDContinuous Drain CurrentTA= 70 C3.2AIDM20Pulsed Drain Cur

 9.1. Size:493K  unikc
 p6006bd.pdf

P6006HV P6006HV

P6006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V60V 21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C21IDContinuous Drain CurrentTC = 100 AC17IDM85Pulsed Drain Current1

 9.2. Size:329K  unikc
 p6006bi.pdf

P6006HV P6006HV

P6006BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 65m @VGS = 10V 18ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C18IDContinuous Drain CurrentTC = 100 C11.8AIDM34Pulsed Drain Current1

 9.3. Size:127K  maxpower
 mxp6006ct.pdf

P6006HV P6006HV

MXP6006CT Preliminary Datasheet 60V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 60 V 6.0 m 116 AFeatures: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP6006CT TO220 MXP Absolute Maximu

 9.4. Size:193K  maxpower
 mxp6006dt-df.pdf

P6006HV P6006HV

MXP6006DT, MXP6006DF Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP6006DT TO-220 MXPTO-263TO-263 MXPM

 9.5. Size:181K  maxpower
 mxp6006dt.pdf

P6006HV P6006HV

MXP6006DT Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP6006DT TO-220 MXPAbsolute Maximum Ratings TC=25

 9.6. Size:493K  maxpower
 mxp6006dp.pdf

P6006HV P6006HV

MXP6006DP Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrderingPark Number Package BrandMXP6006DP Power SO-8 MXPAbsolute Maximum Ratings TC=25unless

 9.7. Size:371K  niko-sem
 p6006bd.pdf

P6006HV P6006HV

P6006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 60m @VGS = 10V 21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C21IDContinuous Drain CurrentTC = 100 AC17IDM85Pulsed Drain Current1T

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