P6006HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V60V 4.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60 VVGSGate-Source Voltage 20 VTA = 25 C4.5IDContinuous Drain CurrentTA= 70 C3.2AIDM20Pulsed Drain Cur

P6006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V60V 21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C21IDContinuous Drain CurrentTC = 100 AC17IDM85Pulsed Drain Current1

P6006BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 65m @VGS = 10V 18ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C18IDContinuous Drain CurrentTC = 100 C11.8AIDM34Pulsed Drain Current1

MXP6006CT Preliminary Datasheet 60V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 60 V 6.0 m 116 AFeatures: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP6006CT TO220 MXP Absolute Maximu

MXP6006DT, MXP6006DF Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP6006DT TO-220 MXPTO-263TO-263 MXPM

MXP6006DT Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP6006DT TO-220 MXPAbsolute Maximum Ratings TC=25

MXP6006DP Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrderingPark Number Package BrandMXP6006DP Power SO-8 MXPAbsolute Maximum Ratings TC=25unless

P6006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 60m @VGS = 10V 21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C21IDContinuous Drain CurrentTC = 100 AC17IDM85Pulsed Drain Current1T