APM4048DU4
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APM4048DU4
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 25
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7.5(6)
A
Tjⓘ - Максимальная температура канала: 150
°C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033(0.048)
Ohm
Тип корпуса: TO252-4
- подбор MOSFET транзистора по параметрам
APM4048DU4
Datasheet (PDF)
..1. Size:484K anpec
apm4048du4.pdf 

APM4048DU4 Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1D2 N-Channel40V/7.5A,S1RDS(ON)=25m (typ.) @ VGS=10VG1S2RDS(ON)=35m (typ.) @ VGS=4.5VG2 P-Channel Top View of TO-252-4-40V/-6A,RDS(ON)=37m (typ.) @ VGS= -10V(3) (3)D1 D2RDS(ON)=49m (typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged(2)(5)G
7.1. Size:255K anpec
apm4048adu4.pdf 

APM4048ADU4 Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 D2 N-Channel40V/7.5A,RDS(ON)=25m (typ.) @ VGS=10VRDS(ON)=35m (typ.) @ VGS=4.5V P-Channel-40V/-6A,RDS(ON)=37m (typ.) @ VGS= -10VS1 G1 S2 G2RDS(ON)=49m (typ.) @ VGS=-4.5V Top View of TO-252-4 Super High Dense Cell Design Avalanche Rated (3) (3)D1 D2 Reliable and Rugge
9.1. Size:202K anpec
apm4050pu.pdf 

APM4050PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10VG D RDS(ON)=47m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSSCompliant)ApplicationsG Power Management in LCD/TV InverterDP-Channel MOSFETOrdering and Mar
9.2. Size:206K anpec
apm4018nu.pdf 

APM4018NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/60A,DRDS(ON)=6.5m (typ.) @ VGS=10VGRDS(ON)=9.5m (typ.) @ VGS=4.5VS Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Channel MOSFETO
9.3. Size:200K anpec
apm4010nu.pdf 

APM4010NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/57A,RDS(ON)=8.2m (typ.) @ VGS=10VG DRDS(ON)=13m (typ.) @ VGS=5VS Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSDCompliant)ApplicationsG Power Management in LCD monitor/TV inverter.SN-Channel MOSFETOrdering and Marking
9.4. Size:493K anpec
apm4052du4.pdf 

APM4052DU4 Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1D2 N-Channel40V/7.5A,S1RDS(ON)= 30m (typ.) @ VGS= 10VG1RDS(ON)= 46m (typ.) @ VGS= 5VS2G2 P-Channel Top View of TO-252-4-40V/-6A,RDS(ON)= 40m (typ.) @ VGS= -10V (3) (3)D1 D2RDS(ON)= 52m (typ.) @ VGS= -5V Super High Dense Cell Design Reliable and Rugged(2)(5)
9.5. Size:202K anpec
apm4030nu.pdf 

APM4030NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,RDS(ON)=17m (typ.) @ VGS=10VRDS(ON)=26m (typ.) @ VGS=4.5VG D Super High Dense Cell DesignS Top View of TO-252 Reliable and Rugged Lead Free and Green Devices Available (RoHS (2)D1Compliant)Applications(1)G1 Inverter Application in LCM and LCD TVS1(3)N-Channel MOSFETOrder
9.6. Size:201K anpec
apm4030anu.pdf 

APM4030ANUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,RDS(ON)=17m (typ.) @ VGS=10VRDS(ON)=26m (typ.) @ VGS=4.5VG D Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)DApplications Inverter application in LCD Monitor/TVGSN-Channel MOSFETOrdering and Marking InformationPackag
9.7. Size:202K anpec
apm4012nu.pdf 

APM4012NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/55A,RDS(ON)=9m (typ.) @ VGS=10VRDS(ON)=12m (typ.) @ VGS=5V Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in LCD monitor/TV inverter.SN-Channel MOSFETOrdering and Marking Informati
9.8. Size:231K anpec
apm4008nu.pdf 

APM4008NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/60A,RDS(ON)=6.5m (typ.) @ VGS=10VG DRDS(ON)=10.5m (typ.) @ VGS=4.5VS Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSDCompliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Channel MOSFET
9.9. Size:197K anpec
apm4017pu.pdf 

APM4017PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-40A, RDS(ON)= 14m (typ.) @ VGS= -10VG D RDS(ON)= 20m (typ.) @ VGS= -4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Power Management in LCD TV InverterGDP-Channel MOSFETOrdering and Marking Informatio
9.10. Size:201K anpec
apm4015pu.pdf 

APM4015PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-45A, RDS(ON)= 13m (typ.) @ VGS=-10VG D RDS(ON)= 19m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHSSCompliant)ApplicationsG Power Management in LCD TV InverterDP-Channel MOSFETOrdering and M
9.11. Size:196K anpec
apm4034nu.pdf 

APM4034NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/20A,RDS(ON)= 29m (typ.) @ VGS= 10VRDS(ON)= 45m (typ.) @ VGS= 5VG D Super High Dense Cell DesignS Top View of TO-252 Reliable and Rugged Lead Free Available (RoHS Compliant)(2)D1Applications(1)G1 Inventer Application in LCM and LCD TVS1(3)N-Channel MOSFETOrdering and Marking
9.12. Size:201K anpec
apm4050apu.pdf 

APM4050APUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10VG D RDS(ON)=47m (typ.) @ VGS=-4.5VS Super High Dense Cell Design Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Inverter application in LCD Monitor/TVGDP-Channel MOSFETOrdering and Marking Informatio
9.13. Size:229K anpec
apm4008ng.pdf 

APM4008NGN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/60A,RDS(ON)=6.5m (typ.) @ VGS=10VRDS(ON)=10m (typ.) @ VGS=4.5V Super High Dense Cell DesignD Reliable and Rugged Lead Free and Green Devices Available (RoHS G SCompliant) Top View of TO-263DApplications Power Management in LCD monitor/TVGSN-Channel MOSFETOrdering and Marking Infor
9.14. Size:195K anpec
apm4053pu.pdf 

APM4053PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-25A, RDS(ON)= 40m (typ.) @ VGS= -10VG D RDS(ON)= 55m (typ.) @ VGS= -5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Power Management in LCD TV InverterGDP-Channel MOSFETOrdering and Marking Information
9.15. Size:229K anpec
apm4015k.pdf 

APM4015K P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -40V/-7.5A, DDRDS(ON)=18m (typ.) @ VGS=-10VRDS(ON)=25m (typ.) @ VGS=-4.5VSSS Super High Dense Cell DesignG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 1, 2, 3 ) (RoHS Compliant)S S SApplications(4)G Power Management in LCD TV InverterD D D D
9.16. Size:514K sino
apm4030bnu.pdf 

APM4030BNUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/35A,DRDS(ON)=17m (typ.) @ VGS=10VSRDS(ON)=26m (typ.) @ VGS=4.5VG Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices Available(RoHS Compliant)(2)D1(1)ApplicationsG1 Inverter Application in LCM and LCD TV.S1(3)N-Channel MOSFETOrdering and Marking Informati
9.17. Size:515K sino
apm4050bpu.pdf 

APM4050BPU P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -40V/-25A, RDS(ON)=33m (typ.) @ VGS=-10VS RDS(ON)=59m (typ.) @ VGS=-4.5VG Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3(RoHS Compliant)SApplicationsG Power Management in LCD/TV Inverter.DP-Channel MOSFETOrdering and Marking InformationPackage
9.18. Size:1433K kexin
apm4015pu.pdf 

SMD Type MOSFETP-Channel Enhancement MOSFET APM4015PU Typical CharacterisiticsDrain CurrentPower Dissipation60 50504040303020201010TC=25oC,VG=-10VTC=25oC0 00 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160Tj - Junction Temperature (C)Tj - Junction Temperature (C)Safe Operation AreaThermal Transient Impedance2200Duty = 0.
9.19. Size:1539K cn vbsemi
apm4050puc.pdf 

APM4050PUCwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, u
9.20. Size:1483K cn vbsemi
apm4010nuc.pdf 

APM4010NUCwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM R
9.21. Size:1543K cn vbsemi
apm4050apuc.pdf 

APM4050APUCwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C,
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