APM4588K. Аналоги и основные параметры
Наименование производителя: APM4588K
Тип транзистора: MOSFET
Полярность: NP
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5(3.5) A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.052(0.1) Ohm
Тип корпуса: SOP8
Аналог (замена) для APM4588K
- подборⓘ MOSFET транзистора по параметрам
APM4588K даташит
..1. Size:265K anpec
apm4588k.pdf 
APM4588K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 60V/5A, RDS(ON) = 38m (typ.) @ VGS = 10V RDS(ON) = 55m (typ.) @ VGS = 4.5V P-Channel -60V/-3.5A, Top View of SOP - 8 RDS(ON) = 80m (typ.) @ VGS =-10V (3) (8) (7) RDS(ON) = 100m (typ.) @ VGS =-4.5V S2 D1 D1 Super High Dense Cell Design Reliable and Rugged (4) Lead Free A
9.1. Size:264K anpec
apm4568k.pdf 
APM4568K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 40V/6.5A, RDS(ON) = 20m (typ.) @ VGS = 10V RDS(ON) = 28m (typ.) @ VGS = 4.5V P-Channel -40V/-5A, Top View of SOP - 8 RDS(ON) = 35m (typ.) @ VGS =-10V (3) (8) (7) RDS(ON) = 48m (typ.) @ VGS =-4.5V S2 D1 D1 Super High Dense Cell Design Reliable and Rugged (4) Lead Free Av
9.2. Size:241K anpec
apm4550j.pdf 
APM4550J Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 30V/8A, RDS(ON) = 20m (typ.) @ VGS = 10V RDS(ON) = 30m (typ.) @ VGS = 4.5V P-Channel Top View of DIP - 8 -30V/-7A, RDS(ON) = 40m (typ.) @ VGS = -10V D1 D1 S2 RDS(ON) = 62m (typ.) @ VGS = -4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compl
9.3. Size:265K anpec
apm4552k.pdf 
APM4552K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 30V/7A, D2 RDS(ON) = 23m (typ.) @ VGS = 10V RDS(ON) = 34m (typ.) @ VGS = 4.5V S1 P-Channel G1 -30V/-5A, S2 G2 RDS(ON) = 46m (typ.) @ VGS =-10V RDS(ON) = 62m (typ.) @ VGS =-4.5V Top View of SOP - 8 Super High Dense Cell Design (6) (5) (8) (7) D2 D2 D1 D1
9.4. Size:180K anpec
apm4536k.pdf 
APM4536K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel D1 D1 30V/5A, D2 D2 RDS(ON) =35m (typ.) @ VGS = 10V S1 RDS(ON) =45m (typ.) @ VGS = 4.5V G1 S2 P-Channel G2 -30V/-5A, Top View of SOP - 8 RDS(ON) =40m (typ.) @ VGS =-10V RDS(ON) =55m (typ.) @ VGS =-4.5V (8) (7) (3) D1 D1 S2 Super High Dense Cell
9.5. Size:234K anpec
apm4532.pdf 
APM4532 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel S1 1 8 D1 30V/5A, RDS(ON)=35m (typ.) @ VGS=10V G1 2 7 D1 RDS(ON)=60m (typ.) @ VGS=4.5V S2 3 6 D2 G2 4 5 D2 P-Channel -30V/-3.5A, RDS(ON)=85m (typ.) @ VGS=-10V SO-8 RDS(ON)=135m (typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely D1 D1 S2 Lo
9.6. Size:271K anpec
apm4534k.pdf 
APM4534K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 30V/4.5A RDS(ON) = 65m (typ.) @ VGS = 10V RDS(ON) = 90m (typ.) @ VGS = 4.5V P-Channel -30V/-3.3A, RDS(ON) = 110m (typ.) @ VGS = -10V RDS(ON) = 175m (typ.) @ VGS = -4.5V Top View of SOP - 8 Super High Dense Cell Design (8) (7) (6) (5) D1 D1 D2 D2 Reliable and Rugged Lea
9.7. Size:263K anpec
apm4550k.pdf 
APM4550K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 30V/7A, RDS(ON) = 20m (typ.) @ VGS = 10V RDS(ON) = 30m (typ.) @ VGS = 4.5V P-Channel Top View of SOP - 8 -30V/-5A, RDS(ON) = 40m (typ.) @ VGS = -10V (7) (8) (3) RDS(ON) = 62m (typ.) @ VGS = -4.5V D1 D1 S2 Super High Dense Cell Design Reliable and Rugged (4) Lead Free Av
9.8. Size:342K anpec
apm4500.pdf 
APM4500 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel S1 1 8 D1 20V/8A , RDS(ON)=22m (typ.) @ VGS=4.5V G1 2 7 D1 RDS(ON)=30m (typ.) @ VGS=2.5V S2 3 6 D2 G2 4 5 D2 P-Channel -20V/-4.3A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=105m (typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low D1 D1
9.9. Size:224K anpec
apm4568j.pdf 
APM4568J Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 40V/7.5A, RDS(ON) =21m (typ.) @ VGS = 10V RDS(ON) =30m (typ.) @ VGS = 4.5V P-Channel Top View of PDIP - 8 -40V/-6A, RDS(ON) =36m (typ.) @ VGS =-10V (8) (7) (3) RDS(ON) =50m (typ.) @ VGS =-4.5V D1 D1 S2 Super High Dense Cell Design Reliable and Rugged (4) Lead Free Availab
9.10. Size:240K anpec
apm4500ak.pdf 
APM4500AK Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 D1 N-Channel D2 D2 20V/8A, RDS(ON) =22m (typ.) @ VGS = 4.5V S1 RDS(ON) =30m (typ.) @ VGS = 2.5V G1 S2 P-Channel G2 -20V/-4.3A, Top View of SOP - 8 RDS(ON) =80m (typ.) @ VGS =-4.5V (8) (7) (6) (5) RDS(ON) =105m (typ.) @ VGS =-2.5V D1 D1 D2 D2 Super High Dense Cell Des
9.11. Size:187K anpec
apm4532k.pdf 
APM4532K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel D1 D1 D2 30V/5A, D2 RDS(ON) =35m (typ.) @ VGS = 10V S1 RDS(ON) =60m (typ.) @ VGS = 4.5V G1 S2 G2 P-Channel -30V/-3.5A, Top View of SOP - 8 RDS(ON) =85m (typ.) @ VGS =-10V (8) (7) (3) RDS(ON) =135m (typ.) @ VGS =-4.5V D1 D1 S2 Super High Dense C
9.12. Size:198K anpec
apm4538k.pdf 
APM4538K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel D1 D1 D2 36V/5A, D2 RDS(ON) =50m (typ.) @ VGS = 10V S1 RDS(ON) =60m (typ.) @ VGS = 4.5V G1 S2 G2 P-Channel -36V/-4A, Top View of SOP - 8 RDS(ON) =60m (typ.) @ VGS =-10V (3) RDS(ON) =80m (typ.) @ VGS =-4.5V (8) (7) S2 D1 D1 Super High Dense Cel
9.13. Size:269K anpec
apm4548k.pdf 
APM4548K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 30V/7A, RDS(ON) = 18m (typ.) @ VGS = 10V RDS(ON) = 23m (typ.) @ VGS = 4.5V P-Channel Top View of SOP - 8 -30V/-6A, RDS(ON) = 32m (typ.) @ VGS =-10V (3) (8) (7) RDS(ON) = 42m (typ.) @ VGS =-4.5V S2 D1 D1 Super High Dense Cell Design Reliable and Rugged (4) Lead
9.14. Size:181K anpec
apm4542k.pdf 
APM4542K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel D1 D1 D2 30V/7A, D2 RDS(ON) =17m (typ.) @ VGS = 10V S1 RDS(ON) =22m (typ.) @ VGS = 4.5V G1 S2 G2 P-Channel Top View of SOP - 8 -30V/-5.5A, RDS(ON) =35m (typ.) @ VGS =-10V (3) (8) (7) RDS(ON) =51m (typ.) @ VGS =-4.5V S2 D1 D1 Super High Dense C
9.15. Size:703K anpec
apm4500k.pdf 
APM4500 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel S1 1 8 D1 20V/8A , RDS(ON)=22m (typ.) @ VGS=4.5V G1 2 7 D1 RDS(ON)=30m (typ.) @ VGS=2.5V S2 3 6 D2 G2 4 5 D2 P-Channel -20V/-4.3A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=105m (typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low D1 D1
9.16. Size:264K anpec
apm4548ak.pdf 
APM4548AK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 30V/7A, RDS(ON) = 18m (typ.) @ VGS = 10V RDS(ON) = 23m (typ.) @ VGS = 4.5V P-Channel -30V/-6A, Top View of SOP - 8 RDS(ON) = 32m (typ.) @ VGS =-10V RDS(ON) = 42m (typ.) @ VGS =-4.5V (8) (7) (6) (5) D1 D1 D2 D2 Super High Dense Cell Design Reliable and Rugged Lead Free a
9.17. Size:225K anpec
apm4568ak.pdf 
APM4568AK Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 40V/6.5A, D2 RDS(ON) = 20m (typ.) @ VGS = 10V S1 RDS(ON) = 28m (typ.) @ VGS = 4.5V G1 S2 P-Channel G2 -40V/-5A, Top View of SOP - 8 RDS(ON) = 35m (typ.) @ VGS =-10V RDS(ON) = 48m (typ.) @ VGS =-4.5V (8) (7) (6) (5) Super High Dense Cell Design D1 D1 D2 D2
9.18. Size:302K sino
apm4500ak.pdf 
APM4500AK Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 D1 N-Channel D2 D2 20V/8A, RDS(ON) =22m (typ.) @ VGS = 4.5V S1 RDS(ON) =30m (typ.) @ VGS = 2.5V G1 S2 G2 P-Channel -20V/-4.3A, Top View of SOP 8 RDS(ON) =80m (typ.) @ VGS =-4.5V (8) (7) (6) (5) RDS(ON) =105m (typ.) @ VGS =-2.5V D1 D1 D2 D2 Reliable and Rugged Lead Free and Gr
9.19. Size:208K sino
apm4568ak.pdf 
APM4568AK Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 D1 N-Channel D2 D2 40V/6.5A, RDS(ON) = 20m (typ.) @ VGS = 10V S1 RDS(ON) = 28m (typ.) @ VGS = 4.5V G1 S2 G2 P-Channel -40V/-5A, Top View of SOP-8 RDS(ON) = 35m (typ.) @ VGS =-10V RDS(ON) = 48m (typ.) @ VGS =-4.5V (8) (7) (6) (5) 100% UIS + Rg Tested D1 D1 D2 D2 Reliabl
9.20. Size:1667K cn vbsemi
apm4532kc.pdf 
APM4532KC www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG
9.21. Size:1612K cn vbsemi
apm4550kc.pdf 
APM4550KC www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG
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