APM4906K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APM4906K
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.5 nC
Время нарастания (tr): 18 ns
Выходная емкость (Cd): 130 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: SOP8
APM4906K Datasheet (PDF)
apm4906k.pdf
APM4906KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7A,RDS(ON) =22m (typ.) @ VGS = 10VRDS(ON) =26m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)D1S1/D2(1)(2) (5)(6)(7)Applications(8)G1 Power Management in Notebook Computer,G2Portable Equ
apm4904k.pdf
APM4904KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7A,RDS(ON) =22m (typ.) @ VGS = 10VRDS(ON) =26m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)D1S1/D2(1)(2) (5)(6)(7)Applications(8)G1 Power Management in Notebook Computer,G2Portable Equ
apm4953k.pdf
APM4953KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 -30V/-4.9A ,D2D2 RDS(ON)=53m (typ.) @ VGS=-10VRDS(ON)=80m (typ.) @ VGS=-4.5VS1 Reliable and RuggedG1S2G2 ESD ProtectionTop View of SOP 8 Lead Free and Green Devices Available (RoHS Compliant)(1) (3)S1 S2Applications(2) (4)G1 G2 Power Management in Notebook Computer,Po
apm4953.pdf
APM4953 Dual P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.9A, RDS(ON) = 53m(typ.) @ VGS = -10VS1 1 8 D1RDS(ON) = 80m(typ.) @ VGS = -4.5VG1 2 7 D1 Super High Density Cell DesignS2 3 6 D2 Reliable and RuggedG2 45 D2 SO-8 Package SO - 8Applications S1 S2 Power Managemen
apm4947k.pdf
APM4947KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 -30V/-2.5A ,D1D2D2RDS(ON)=90m(typ.) @ VGS=-10VRDS(ON)=145m(typ.) @ VGS=-4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 SOP-8 Package(1) (3) Lead Free Available (RoHS Compl
apm4925k.pdf
APM4925KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 -30V/-6.1A ,D1D2RDS(ON)=24m(typ.) @ VGS=-10V D2RDS(ON)=30m(typ.) @ VGS=-4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)
apm4910k.pdf
APM4910KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 130V/7A,RDS(ON) = 22m (typ.) @ VGS = 10VRDS(ON) = 26m (typ.) @ VGS = 4.5V Channel 2Top View of SOP - 830V/10A,RDS(ON) = 12m (typ.) @ VGS =10VD1S1/D2RDS(ON) = 16m (typ.) @ VGS =4.5V(1)(2) (5)(6)(7) Super High Dense Cell Design Reliable and Rugged(8)G1 Lead Free Availab
apm4925.pdf
APM4925 P-Channel Enhancement Mode MOSFETFeaturesPin Description -30V/-6.1A, RDS(ON) = 24m(typ.) @ VGS = -10VS1 1 8 D1RDS(ON) = 30m(typ.) @ VGS = -4.5VG1 2 7 D1 Super High Density Cell DesignS2 3 6 D2 Reliable and RuggedG2 45 D2 SO-8 Package SO - 8ApplicationsS1 S2 Power Management i
apm4953k.pdf
APM4953KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 -30V/-4.9A ,D2D2 RDS(ON)=53m (typ.) @ VGS=-10VRDS(ON)=80m (typ.) @ VGS=-4.5VS1 Reliable and RuggedG1S2G2 ESD ProtectionTop View of SOP 8 Lead Free and Green Devices Available (RoHS Compliant)(1) (3)S1 S2Applications(2) (4)G1 G2 Power Management in Notebook Computer,Po
apm4927k.pdf
APM4927K Dual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 -30V/-9A,D2RDS(ON)= 15m (typ.) @ VGS=-10VRDS(ON)= 28m (typ.) @ VGS=-4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available(1) (3) (RoHS Compliant)S1 S2Applications (2) (4)G1 G2 Power Management in MB/NB
apm4927kc.pdf
APM4927KCwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G
apm4953kc.pdf
APM4953KCwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi
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