Справочник MOSFET. APM7314

 

APM7314 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APM7314
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: SO8

 Аналог (замена) для APM7314

 

 

APM7314 Datasheet (PDF)

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 apm7314.pdf

APM7314 APM7314

APM7314N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/6A , RDS(ON)=21m(typ.) @ VGS=10VRDS(ON)=32m(typ.) @ VGS=5VS1 1 8 D1 Super High Dense Cell Design for ExtremelyG1 2 7 D1Low RDS(ON)S2 3 6 D2 Reliable and RuggedG2 45 D2 SO-8 PackageTop ViewApplicationsD1 D1 D2 D2

 0.1. Size:137K  anpec
 apm7314k.pdf

APM7314 APM7314

APM7314KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 30V/8A,D1D2RDS(ON) =18m(typ.) @ VGS = 10VD2 RDS(ON) =23m(typ.) @ VGS = 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1

 8.1. Size:216K  anpec
 apm7318.pdf

APM7314 APM7314

APM7318Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A , RDS(ON)=15m(typ.) @ VGS=4.5VSO-8RDS(ON)=30m(typ.) @ VGS=2.5VS1 1 8 D1 Super High Dense Cell Design for ExtremelyG1 2 7 D1Low RDS(ON)S2 3 6 D2 Reliable and RuggedG2 45 D2 SO-8 PackageTop ViewD1 D1 D2 D2Applica

 8.2. Size:139K  anpec
 apm7312k.pdf

APM7314 APM7314

APM7312KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 20V/6A,D1D2RDS(ON) =35m(typ.) @ VGS = 10VD2 RDS(ON) =45m(typ.) @ VGS = 4.5VS1 G1 RDS(ON) =110m(typ.) @ VGS = 2.5VS2G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant)

 8.3. Size:142K  anpec
 apm7318k.pdf

APM7314 APM7314

APM7318KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 20V/8A,D1D2RDS(ON) =15m(typ.) @ VGS =4.5VD2 RDS(ON) =30m(typ.) @ VGS =2.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)

 8.4. Size:161K  anpec
 apm7316.pdf

APM7314 APM7314

APM7316Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=25m(typ.) @ VGS=4.5VS1 1 8 D1RDS(ON)=40m(typ.) @ VGS=2.5VG1 2 7 D1 Super High Dense Cell Design for ExtremelyS2 3 6 D2G2 4 5 D2Low RDS(ON) Reliable and RuggedSO-8 SO-8 PackageD1 D1 D2 D2ApplicationsG1

 8.5. Size:192K  anpec
 apm7313k.pdf

APM7314 APM7314

APM7313KDual N-Channel Enhancement Mode MOSFETPin DescriptionFeatures 30V/6A,RDS(ON) =21m(typ.) @ VGS = 10VRDS(ON) =27m(typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Power Management in Notebook Computer,(2) (4)Portable Equipment and Battery P

 8.6. Size:146K  anpec
 apm7312.pdf

APM7314 APM7314

APM7312 Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=35m(typ.) @ VGS=10VSO-8RDS(ON)=45m(typ.) @ VGS=4.5VS1 1 8 D1 RDS(ON)=110m(typ.) @ VGS=2.5VG1 2 7 D1 Super High Dense Cell Design for ExtremelyS2 3 6 D2Low RDS(ON) Reliable and Rugged G2 45 D2 SO-8 Package

 8.7. Size:835K  cn vbsemi
 apm7313kc.pdf

APM7314 APM7314

APM7313KCwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 8.8. Size:1469K  cn vbsemi
 apm7318kc.pdf

APM7314 APM7314

APM7318KCwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25

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