Справочник MOSFET. APM9424K

 

APM9424K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APM9424K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28.2 nC
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 720 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для APM9424K

 

 

APM9424K Datasheet (PDF)

 ..1. Size:138K  anpec
 apm9424k.pdf

APM9424K APM9424K

APM9424KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 20V/10A,DDDRDS(ON)=10m(typ.) @ VGS=4.5VRDS(ON)=15m(typ.) @ VGS=2.5VSS Super High Dense Cell DesignSG Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications

 7.1. Size:162K  anpec
 apm9424.pdf

APM9424K APM9424K

APM9424 N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/10A, RDS(ON) = 10m(typ.) @ VGS = 4.5VS 1 8 D RDS(ON) = 15m(typ.) @ VGS = 2.5VS 2 7 D Super High Density Cell DesignS 3 6 D Reliable and RuggedG 45 D SO-8 Package SO - 8D D D DApplications Power Management in Notebook

 8.1. Size:155K  anpec
 apm9428k.pdf

APM9424K APM9424K

APM9428K N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 20V/6A ,DDDRDS(ON)=25m(typ.) @ VGS=4.5V RDS(ON)=50m(typ.) @ VGS=2.5VSS Super High Dense Cell DesignSG Reliable and Rugged Lead Free Available (RoHS Compliant)Top View of SOP - 8( 5,6,7,8 )D D D DApplications

 9.1. Size:157K  anpec
 apm9430.pdf

APM9424K APM9424K

APM9430 N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A, RDS(ON) = 40m(typ.) @ VGS = 4.5VS 1 8 D RDS(ON) = 110m(typ.) @ VGS = 2.5VS 2 7 D Super High Density Cell DesignS 3 6 D Reliable and RuggedG 45 D SO-8 Package SO - 8D D D DApplications Power Management in Notebook

 9.2. Size:154K  anpec
 apm9435.pdf

APM9424K APM9424K

APM9435 P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.6A, RDS(ON) = 52m(typ.) @ VGS = -10VS 1 8 DRDS(ON) = 80m(typ.) @ VGS = -4.5VS 2 7 D Super High Density Cell DesignS 3 6 D Reliable and RuggedG 45 D SO-8 Package SO - 8ApplicationsS S S Power Management in Noteboo

 9.3. Size:169K  anpec
 apm9410k.pdf

APM9424K APM9424K

APM9410N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/8A , RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=23m(typ.) @ VGS=4.5VS 1 8 D Super High Dense Cell Design for ExtremelyS 2 7 DLow RDS(ON)S 3 6 D Reliable and RuggedG 45 D SO-8 PackageTop ViewDApplications Power Managem

 9.4. Size:513K  anpec
 apm9435k.pdf

APM9424K APM9424K

APM9435K P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -30V/-4.6A , DD RDS(ON)=52m(typ.) @ VGS=-10V RDS(ON)=80m(typ.) @ VGS=-4.5VSS Super High Dense Cell DesignSG Reliable and RuggedTop View of SOP - 8 Lead Free and Green Devices Available (RoHS Compliant)( 1, 2, 3 )S S SApplications(4) Power Management in Notebook Computer,

 9.5. Size:141K  anpec
 apm9430k.pdf

APM9424K APM9424K

APM9430K N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A , DDDRDS(ON)=40m(typ.) @ VGS=4.5VDRDS(ON)=110m(typ.) @ VGS=2.5VSS Super High Dense Cell DesignSG Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications

 9.6. Size:176K  anpec
 apm9410.pdf

APM9424K APM9424K

APM9410N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/8A , RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=23m(typ.) @ VGS=4.5VS 1 8 D Super High Dense Cell Design for ExtremelyS 2 7 DLow RDS(ON)S 3 6 D Reliable and RuggedG 45 D SO-8 PackageTop ViewDApplications Power Managem

 9.7. Size:1488K  kexin
 apm9435k.pdf

APM9424K APM9424K

SMD Type MOSFETP-Channel MOSFETAPM9435K (APM9435KC)SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V)1.50 0.15 RDS(ON) 52m (VGS =-10V) RDS(ON) 80m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source47 Drain3 SourceG8 Drain4 Gate5 162738 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vo

 9.8. Size:805K  cn vbsemi
 apm9435kc.pdf

APM9424K APM9424K

APM9435KCwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

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