4920 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology co., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET 4920 Simple Drive Requirement BVDSS 30V D2 D2 Low On-resistance RDS(ON) 25m D1 D1 Fast Switching ID 7A G2 S2 G1 SO-8 S1 Description D2 D1 The TUOFENG MOSFETs from APEC provide the designer with the best combination of fast s

Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 3 AMPERE Excellent

Ordering number EN4766 NPN Epitaxial Planar Silicon Transistor 2SC4920 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=4.7k , R2=4.7k ). 2106A Very small-sized package permitting 2SC4920- [2SC4920] applied sets to be made smaller and slimmer. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1

SQ4920EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0145 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0175 Material categorization ID (A) per leg 8 For definitions of compliance please see Configuration

Si4920DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFETs 30 0.035 at VGS = 4.5 V 5.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC D1 D2 SO-8 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2

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ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high performance plastic devices feature 3 AMPERE Low Saturation Voltage GENERAL PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40 80 VOLTS Exc

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis

2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C 3.0 A, 40-80 V, 30 W Excellent Safe Oper

NTMS4920N Power MOSFET 30 V, 17 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 4.3 mW @ 10 V 30 V 1

SSG4920N 6.9 A, 30 V, RDS(ON) 34 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process Low RDS(on) assures minimal power loss and conserves energy, making B this device ideal for use in power management

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

AP4920GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D2 D2 D1 Low On-resistance RDS(ON) 25m D1 Fast Switching ID 7A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast s

Analog Power AM4920N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 34 @ VGS = 10V 6.5 Low thermal impedance 30 41 @ VGS = 4.5V 5.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

SMD Type IC SMD Type IC Dual N-Channel 30-V (D-S) MOSFET KI4920DY Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 )* TA =25 ID 6.9 A TA =70 5.5 Pulsed Drain Current IDM 40 Continuous Source Current (Diode Conduction) * IS 1.7 A TA =25 2 Maximum Power Dissipation * P

AiT Semiconductor Inc. AM4920 www.ait-ic.com MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4920 is the Dual N-Channel logic 30V / 7.8A, R =16m (typ.)@V =10V DS(ON) GS enhancement mode power field effect transistor is 30V / 5.8A, R =28m (typ.)@V =4.5V DS(ON) GS produced using high cell density. Advanced trench Super high density cell design f

ME4920/ME4920-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 35 m @VGS=10V The ME4920 is the N-Channel logic enhancement mode power field RDS(ON) 45 m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

SSM4920M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple Drive Requirement BV 25V DSS D2 D2 Low On-resistance R 25m D1 DS(ON) D1 Fast Switching I 7A D G2 S2 G1 SO-8 S1 Description D2 D1 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and cost- G1 effectiveness. S1 S2

STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION FEATURE SOP-8 30V/7.2A, RDS(ON) = 28m @VGS

SI4920DY-T1 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2