Shenzhen Tuofeng Semiconductor Technology Co., Ltd660420V Complementary MOSFETProduct Summary N-Channel P-ChannelVDS= 20V -20V ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V) RDS(ON) RDS(ON)

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN and P-Channel Enhancement Mode Power MOSFET660420V Complementary MOSFETSOT-23-6LD1D1G1G1Product Summary 1 6 1 6 S2 S1S2 2 5 S12 5 N-Channel P-ChannelG2 3 4 D2G2 3 4 D2VDS= 20V -20V ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V)Equivalent Cir cuit RDS(ON) RDS(ON)D1 D2D1 D2

PD - 94365PROVISIONALIRF6604DirectFETTM Power MOSFET Application Specific MOSFETsVDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters30V 11.5m@VGS = 7.0V 16A Low Conduction Losses13m@VGS = 4.5V 14A Low Switching Losses Low Profile (

TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain : hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage : VCE (sat) = -0.23 V (max) High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating

Ordering number : ENN7147CPH6604N-Channel Silicon MOSFETCPH6604Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2202 4V drive.[CPH6604]0.152.96 5 40.051 2 30.951 : Source12 : Gate13 : Drain24 : Source25 : Gate20.46 : Drain1SpecificationsSANYO : CPH6Absolute Maximum

Ordering number : EN6459A MCH6604SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6604ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

Ordering number : ENA2204A EFC6604R N-Channel Power MOSFEThttp://onsemi.com 12V, 13A, 9.0m, Dual EFCP Features 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions R

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56604Silicon NPN epitaxial planar typeFor digital circuitsDMC26604 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimensi

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26604Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (Tr2)

This product complies with the RoHS Directive (EU 2002/95/EC).DMA56604Silicon PNP epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here. Click!

AO660420V Complementary MOSFETGeneral Description Product SummaryThe AO6604 combines advanced trench MOSFET N-Channel P-Channeltechnology with a low resistance package to provideVDS= 20V -20Vextremely low RDS(ON). This device is ideal for load switch ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V)and battery protection applications. RDS(ON) RDS(ON)

AFC6604 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/3.5A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/2.6A,RDS(ON)=68m@VGS=2.5V These devices are particularly suited for low P-Channel voltage power m

GreenProductSTS6604LaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)VDSS ID RDS(ON) (m) Max VDSS ID RDS(ON) (m) Max60 @ VGS=4.5V 138 @ VGS=-4.5V20 4A -20V -2.5A75 @ VGS=2.5V 190 @ VGS=-2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S22 5 S134G

SMD Type MOSFETComplementary Trench MOSFET AO6604 (KO6604)( )SOT-23-6 Unit: mm Features 0.4+0.1-0.1 N-ChannelVDS=20V ID=3.4A6 5 4RDS(ON) 65m (VGS = 4.5V)RDS(ON) 75m (VGS = 2.5V)RDS(ON) 100m (VGS = 1.8V) P-ChannelVDS=-20V ID=-2.5A2 31RDS(ON) 75m (VGS =-4.5V)+0.020.15 -0.02+0.01-0.01RDS(ON) 95m (VGS =-2.5V)+0

SMD Type MOSFETComplementary Trench MOSFET AO6604 (KO6604)( )SOT-23-6 Unit: mm Features 0.4+0.1-0.1 N-ChannelVDS=20V ID=3.4A6 5 4RDS(ON) 65m (VGS = 4.5V)RDS(ON) 75m (VGS = 2.5V)RDS(ON) 100m (VGS = 1.8V) P-ChannelVDS=-20V ID=-2.5A2 31RDS(ON) 75m (VGS =-4.5V)+0.020.15 -0.02+0.01-0.01RDS(ON) 95m (VGS =-2.5V)+0

Complementary MOSFET ELM16604EA-SGeneral Description Features ELM16604EA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=20V Vds=-20Vand low gate charge. Id=3.4A(Vgs=4.5V) Id=-2.5A(Vgs=-4.5V) Rds(on)

20V N & P Pair Enhancement Mode MOSFET Product Description Features GSM6604, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/2.6A,RDS(ON)=62m@VGS=2.5V P-ChannelThese devices are particularly suited for low -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V voltage power managem

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6604 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

HSW6604 N-Ch and P-Ch Fast Switching MOSFETs Product Summary Description The HSW6604 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 38m 4A high cell density, which provide excellent RDSON -20V 64m -3A and gate charge for most of the small power switching and load switch applications. The HSW6604 meet the RoHS and Green Product

TWS6604FLN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 65V, load switch ID = 54A power supply RDS(ON) @VGS= 10V, TYP 7m synchronous rectifier RDS(ON) @VGS= 4.5V, TYP 10.5m Pin Configurations PDFN3*3-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Drain-Source Vo

AO6604www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at VGS

HM6604N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS = 20V,ID =3A RDS(ON)