6604 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6604 20V Complementary MOSFET Product Summary N-Channel P-Channel VDS= 20V -20V ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V) RDS(ON) RDS(ON)

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N and P-Channel Enhancement Mode Power MOSFET 6604 20V Complementary MOSFET SOT-23-6L D1 D1 G1 G1 Product Summary 1 6 1 6 S2 S1 S2 2 5 S1 2 5 N-Channel P-Channel G2 3 4 D2 G2 3 4 D2 VDS= 20V -20V ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V) Equivalent Cir cuit RDS(ON) RDS(ON) D1 D2 D1 D2

PD - 94365 PROVISIONAL IRF6604 DirectFETTM Power MOSFET Application Specific MOSFETs VDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters 30V 11.5m @VGS = 7.0V 16A Low Conduction Losses 13m @VGS = 4.5V 14A Low Switching Losses Low Profile (

TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage VCE (sat) = -0.23 V (max) High-speed switching tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating

Ordering number ENN7147 CPH6604 N-Channel Silicon MOSFET CPH6604 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2202 4V drive. [CPH6604] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Source1 2 Gate1 3 Drain2 4 Source2 5 Gate2 0.4 6 Drain1 Specifications SANYO CPH6 Absolute Maximum

Ordering number EN6459A MCH6604 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6604 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 C Parame

Ordering number ENA2204A EFC6604R N-Channel Power MOSFET http //onsemi.com 12V, 13A, 9.0m , Dual EFCP Features 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions R

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56604 Silicon NPN epitaxial planar type For digital circuits DMC26604 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free package Package dimensi

This product complies with the RoHS Directive (EU 2002/95/EC). DMC26604 Silicon NPN epitaxial planar type For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1 Emitter (Tr1) 4 Collector (Tr2)

This product complies with the RoHS Directive (EU 2002/95/EC). DMA56604 Silicon PNP epitaxial planar type For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free package Package dimension clicks here. Click!

AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET N-Channel P-Channel technology with a low resistance package to provide VDS= 20V -20V extremely low RDS(ON). This device is ideal for load switch ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V) and battery protection applications. RDS(ON) RDS(ON)

AFC6604 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/3.5A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/2.6A,RDS(ON)=68m @VGS=2.5V These devices are particularly suited for low P-Channel voltage power m

Green Product STS6604L a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (m ) Max VDSS ID RDS(ON) (m ) Max 60 @ VGS=4.5V 138 @ VGS=-4.5V 20 4A -20V -2.5A 75 @ VGS=2.5V 190 @ VGS=-2.5V D1 D2 SOT 26 Top View G1 D1 6 1 G 1 G 2 S2 2 5 S1 3 4 G

SMD Type MOSFET Complementary Trench MOSFET AO6604 (KO6604) ( ) SOT-23-6 Unit mm Features 0.4+0.1 -0.1 N-Channel VDS=20V ID=3.4A 6 5 4 RDS(ON) 65m (VGS = 4.5V) RDS(ON) 75m (VGS = 2.5V) RDS(ON) 100m (VGS = 1.8V) P-Channel VDS=-20V ID=-2.5A 2 3 1 RDS(ON) 75m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 95m (VGS =-2.5V) +0

SMD Type MOSFET Complementary Trench MOSFET AO6604 (KO6604) ( ) SOT-23-6 Unit mm Features 0.4+0.1 -0.1 N-Channel VDS=20V ID=3.4A 6 5 4 RDS(ON) 65m (VGS = 4.5V) RDS(ON) 75m (VGS = 2.5V) RDS(ON) 100m (VGS = 1.8V) P-Channel VDS=-20V ID=-2.5A 2 3 1 RDS(ON) 75m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 95m (VGS =-2.5V) +0

20V N & P Pair Enhancement Mode MOSFET Product Description Features GSM6604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 20V/3.5A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/2.6A,RDS(ON)=62m @VGS=2.5V P-Channel These devices are particularly suited for low -20V/-3.0A,RDS(ON)=105m @VGS=-4.5V voltage power managem

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6604 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

HSW6604 N-Ch and P-Ch Fast Switching MOSFETs Product Summary Description The HSW6604 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 38m 4A high cell density, which provide excellent RDSON -20V 64m -3A and gate charge for most of the small power switching and load switch applications. The HSW6604 meet the RoHS and Green Product

TWS6604FL N-Channel Enhancement Mode Power MOSFET Features General Description VDS = 65V, load switch ID = 54A power supply RDS(ON) @VGS= 10V, TYP 7m synchronous rectifier RDS(ON) @VGS= 4.5V, TYP 10.5m Pin Configurations PDFN3*3-8L Absolute Maximum Ratings @T =25 unless otherwise noted A Parameter Symbol Ratings Unit Drain-Source Vo

AO6604 www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at VGS

HM6604 N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS = 20V,ID =3A RDS(ON)