S8205A - Даташиты. Аналоги. Основные параметры

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFETN MOSFETDual N-Channel Enhancement Mode Field Effect TransistorS8205ATSSOP-8Unit: mmFeatures5A,20V.rDS(on) = 0.025 @VGS =4.5 VrDS(on) = 0.040 @VGS =2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VContinuous Drain Current ID A5

S8205ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES Low on-resistance:V =20V,I =5A,R 25m@V =4.5VDS D DS(ON) GS Low gate charge For synchronous rectifier applications Surface Mount deviceSOT-23-6MECHANICAL DATA Case: SOT-23-6 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: L

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-6 Plastic-Encapsulate MOSFETS S8205A S8205A Dual N-Channel MOSFETV(BR)DSS RDS(on)MAX IDMax SOT-23-60.022 @ 4.5V20V6.0A0.030 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLI

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com8205ADual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.27.5 @ VG S = 4.0V20V 6A S urface Mount Package.37.5@V G S = 2.5VD1 D2-

PS8205A 20V Dual Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS8205A 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205A uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC convertersgate charge. This

REV. 1.2 FS8205A-DS-12_EN AUG 2009Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET OnlyFSCPropertiesReferenceForFS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual contai

FS8205AN-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 6A 32m@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagramSOT-23-6L Marking G1 D1/D2 G2 8205AS1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1FS

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power MV MOSFET technology High Power and current handing capability