S8205A - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET N MOSFET Dual N-Channel Enhancement Mode Field Effect Transistor S8205A TSSOP-8 Unit mm Features 5A,20V.rDS(on) = 0.025 @VGS =4.5 V rDS(on) = 0.040 @VGS =2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Continuous Drain Current ID A 5

S8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Low on-resistance V =20V,I =5A,R 25m @V =4.5V DS D DS(ON) GS Low gate charge For synchronous rectifier applications Surface Mount device SOT-23-6 MECHANICAL DATA Case SOT-23-6 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Moisture Sensitivity L

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS S8205A S8205A Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.022 @ 4.5V 20V 6.0A 0.030 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLI

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com 8205A Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 27.5 @ VG S = 4.0V 20V 6A S urface Mount Package. 37.5@V G S = 2.5V D1 D2 -

PS8205A 20V Dual Channel NMOSEFT Revision 1.0 Update Date Apr. 2011 ProsPower Microelectronics Co., Ltd PS8205A 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205A uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC converters gate charge. This

REV. 1.2 FS8205A-DS-12_EN AUG 2009 Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET Only FSC Properties Reference For FS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual contai

FS8205A N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 25m @4.5V 20V 6A 32m @2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1 FS

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DS General Description Trench Power MV MOSFET technology High Power and current handing capability