SI2304 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2304 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ V 2.5 GS = 10 V 30 30 0.080 @ VGS = 4.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2304 (A4)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-S

SOT-23 Plastic-Encapsulate MOSFETS SI2304 N-Channel 30-V (D-S) MOSFET SOT-23 PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 3 1.GATE 0.055 @ V 2.5 GS = 10 V 30 30 2.SOURCE 0.080 @ VGS = 4.5 V 2.0 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Equivalent Circuit MARKING Lead free product is acquired Surface mount package A69TF w APPLICATION Load Switch for Por

SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 17 August 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology Product availability SI2304DS in SOT23. 2. Features TrenchMOS technology Very fast switching Subminiature surface mount package. 3. Applications Batte

Si2304BDS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.070 at VGS = 10 V 3.2 TrenchFET Power MOSFET 30 2.6 0.105 at VGS = 4.5 V 2.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2 Top View Si2304BDS

New Product Si2304DDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.060 at VGS = 10 V TrenchFET Power MOSFET 3.6 30 2.1 nC 100 % Rg Tested 0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter T

New Product Si2304DDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.060 at VGS = 10 V TrenchFET Power MOSFET 3.6 30 2.1 nC 100 % Rg Tested 0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter T

Si2304DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.117 @ VGS = 10 V 2.5 30 30 0.190 @ VGS = 4.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2304DS (A4)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-Source Voltage VGS "20 TA= 25_C 2

SMD Type MOSFET N-Channel Enhancement MOSFET SI2304DS (KI2304DS) SOT-23 Unit mm Features +0.1 2.9-0.1 +0.1 0.4 -0.1 VDS (V) = 30V 3 RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD Type MOSFET N-Channel Enhancement MOSFET SI2304DS (KI2304DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

SMD Type MOSFET N-Channel Enhancement MOSFET SI2304DS (KI2304DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

R UMW UM SI2304A N-Channel 30-V (D-S) MOSFET Features SOT 23 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1. GATE 2. SOURCE 3. DRAIN MARKING Equivalent Circuit D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Ta=25 3.5 Continuous Dr