SI2305B - описание и поиск аналогов

SI2305B Features Low RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" P-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Storage Tempe

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2305B P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Power MOSFETs 1.8 V Rated VDS (V) rDS(on) ( )ID (A) Pb-free Available 0.060 at VGS = - 4.5 V -3.0 - 16 RoHS* COMPLIANT 0.080 at VGS = - 2.5 V -2.0 (SOT-23) G 1 3 D S 2 Top View Si2305B ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Para

New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.040 at VGS = - 4.5 V - 4.1 TrenchFET Power MOSFET - 8 0.060 at VGS = - 2.5 V - 3.4 7.8 nC 100 % Rg Tested 0.088 at VGS = - 1.8 V - 2.0 APPLICATIONS Load Switch DC/DC Conv

Si2305CDS Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 5.8 TrenchFET Power MOSFET - 8 0.048 at VGS = - 2.5 V - 5.0 12 nC 100 % Rg Tested 0.065 at VGS = - 1.8 V - 4.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

Si2305CDS Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 5.8 TrenchFET Power MOSFET - 8 0.048 at VGS = - 2.5 V - 5.0 12 nC 100 % Rg Tested 0.065 at VGS = - 1.8 V - 4.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.040 at VGS = - 4.5 V - 4.1 TrenchFET Power MOSFET - 8 0.060 at VGS = - 2.5 V - 3.4 7.8 nC 100 % Rg Tested 0.088 at VGS = - 1.8 V - 2.0 APPLICATIONS Load Switch DC/DC Conv

Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.052 at VGS = - 4.5 V 3.5 TrenchFET Power MOSFETs 1.8 V Rated 0.071 at VGS = - 2.5 V - 8 3 0.108 at VGS = - 1.8 V 2 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2305DS (A5)* * Mark

SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30

SMD Type MOSFET SMD Type P-Channel MOSFET SI2305DS (KI2305DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -8V RDS(ON) 0.052 (VGS = -4.5V) RDS(ON) 0.071 (VGS = -2.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 0.108 (VGS = -1.8V) +0.1 1.9-0.2 1. Gate G 2. Source 3. Drain S Absolute Maximum Ratings Ta

SMD Type MOSFET SMD Type P-Channel MOSFET SI2305DS (KI2305DS) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -8V RDS(ON) 0.052 (VGS = -4.5V) 1 2 RDS(ON) 0.071 (VGS = -2.5V) D +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 0.108 (VGS = -1.8V) +0.1 1.9 -0.1 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25

R UMW SI2305A UMW SI2305A UMW P-Channel MOSFET SOT 23 Features VDS (V) = -20V RDS(ON) 0.065 (VGS = -4.5V) RDS(ON) 0.100 (VGS = -2.5V) RDS(ON) 0.250 (VGS = -1.8V) 1. GATE 2. SOURCE 3. DRAIN MARKING D A50T G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VG

SI2305 MOSFET ROHS P-Channel MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage 12 VGS ID Continuous Drain

Plastic-Encapsulate Mosfets FEATURES SI2305 High dense cell design for extremely low RDS(ON) P-Channel MOSFET Rugged and reliable Case Material Molded Plastic. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -12 V 1.Gate Gate-source Voltage VGS 8 V 2.Source SOT-23 Drain Current (Continuous) ID -4.1 A 3.Drain a

SI2305 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 -12V P-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 37m @ -4.5V 1. GATE -4.2A -12V 2. SOURCE 40m @ -3.3V 1 3. DRAIN 2 APPLICATION Features Load Switch for Portable Devices Trench FET Power MOSFET DC/DC Converter MARKING Equivalent circuit D S5 G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Reel

SI2305 SOT-23 (SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P MOS MAXIMUM RATINGS Characteristic Symbol Rat Unit Drain-Source Voltage BV -20 V DSS - Gate- Source Voltage V +10 V GS - Drain Current (continuous) I -3.9 A D

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate MOSFETS SI2305 P-Channel MOSFET Marking A5SHB Features TrenchFET Power MOSFET Moisture Sensitivity Level 3 per J-STD-020 Applications 1. Gate Load Switch for Portable Devices 2. Source DC/DC Converter 3. Drain Marking A5SHB Maximum Ratings (T =25 C unless otherwise specified) a S

SI2305 AO3401 SI2305 SOT-23 Plastic-Encapsulate MOSFETS P-Channel 12-V( D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit A09T A19T 2305 1.GATE 1.GATE 2.SOURCE 2.SOURCE 3.DRAIN 3.DRAIN Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltag

SI2305CDS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA

SI2305ADS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA

SI2305DS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT